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ZXTD619MCTA

Diodes Incorporated

ZXTD619MCTA by Diodes Incorporated

ZXTD619MCTA by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. Features include 3W power dissipation, 50V collector-emitter voltage, and 165MHz transition frequency. Its small outline package makes it suitable for surface mount designs.

Median Price

$0.858

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 27,090 parts In-Stock

1+ parts

$0.830

100+ parts

$0.455

1k+ parts

$0.333

10k+ parts

$0.275

27,090

$0.830

$0.455

$0.333

$0.275

Element14

Singapore . 2,971 parts In-Stock

1+ parts

$0.886

100+ parts

$0.532

1k+ parts

$0.397

10k+ parts

-

2,971

$0.886

$0.532

$0.397

-

Newark

USA . 2,861 parts In-Stock

1+ parts

$1.010

100+ parts

$0.635

1k+ parts

$0.513

10k+ parts

-

2,861

$1.010

$0.635

$0.513

-

DigiKey

USA . 1,795 parts In-Stock

1+ parts

$1.250

100+ parts

$0.519

1k+ parts

$0.367

10k+ parts

$0.284

1,795

$1.250

$0.519

$0.367

$0.284

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.275

15,000

-

-

-

$0.275

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Farnell

UK . 2,971 parts In-Stock

1+ parts

-

100+ parts

$0.516

1k+ parts

$0.390

10k+ parts

$0.346

2,971

-

$0.516

$0.390

$0.346

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.618

15,000

-

-

-

$0.618

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.003

100+ parts

$0.913

1k+ parts

$0.822

10k+ parts

-

2,500

$1.003

$0.913

$0.822

-

Metaverse IC Inc.

Canada . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70,000

-

-

-

-

Perfect Parts

USA . 47,562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

47,562

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 19,794 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,794

-

-

-

-

Lixinc

USA . 12,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,428

-

-

-

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.505

1k+ parts

$0.320

10k+ parts

$0.268

3,000

-

$0.505

$0.320

$0.268

Overview

Elevate your electronic projects with the ZXTD619MCTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal bipolar junction transistors for various applications. This NPN transistor boasts high reliability and performance, making it perfect for switching tasks. With a maximum collector-emitter voltage of 50V and a maximum collector current of 4A, this transistor offers exceptional value and efficiency. Upgrade your designs today with the ZXTD619MCTA and experience the difference in quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN type transistors are commonly used and have good amplification properties, making them a versatile choice for various applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and can lead to better performance in specific applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off which is essential in many electronic circuits.

Surface Mount: YES

Surface mount capability makes it easy to integrate this transistor into modern electronic designs with compact layouts.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle moderate power levels in various applications.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 50 V

A high collector-emitter voltage rating allows for usage in circuits with higher voltage requirements.

Maximum Collector Current (IC): 4 A

Able to handle high collector currents, making it suitable for applications that require higher current loads.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTD619MCTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTD619MCTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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