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ZXMP2120FFTA

Diodes Incorporated

ZXMP2120FFTA by Diodes Incorporated

ZXMP2120FFTA by Diodes Inc. is a P-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode at max temp of 150°C. With surface mount capability and low on-resistance of 28 ohm, it offers efficient performance in compact designs.

Median Price

$1.180

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,479 parts In-Stock

1+ parts

$1.180

100+ parts

$0.482

1k+ parts

$0.340

10k+ parts

$0.288

2,479

$1.180

$0.482

$0.340

$0.288

DigiKey

USA . 34 parts In-Stock

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$1.180

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34

$1.180

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Newark

USA . 6 parts In-Stock

1+ parts

$1.220

100+ parts

$0.496

1k+ parts

$0.350

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6

$1.220

$0.496

$0.350

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Verical

USA . 9,000 parts In-Stock

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$0.251

9,000

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$0.251

Distributors (In-Stock)

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Nova Conductors

Japan . 24 parts In-Stock

1+ parts

$0.338

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24

$0.338

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DF Sales Co.

USA . 20 parts In-Stock

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$0.560

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20

$0.560

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DF Sales Co.

USA . 20 parts In-Stock

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$0.560

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20

$0.560

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Chip Stock

USA . 19,000 parts In-Stock

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19,000

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NAC Semi

USA . 6,000 parts In-Stock

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$0.700

6,000

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$0.700

Vyrian

USA . 4,932 parts In-Stock

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4,932

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.477

3,000

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$0.477

Bristol Electronics

USA . 2,816 parts In-Stock

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2,816

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,099 parts In-Stock

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Inventory MP

USA . 816 parts In-Stock

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816

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ACDS - Activité Composants Distribution Service

France . 500 parts In-Stock

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500

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Semi Source

USA . 54 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 4,404 parts In-Stock

1+ parts

$0.338

100+ parts

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$0.328

4,404

$0.338

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$0.328

Continental Prestige Electronics

USA . 1,649 parts In-Stock

1+ parts

$0.338

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$0.331

1,649

$0.338

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$0.331

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.338

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$0.331

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500

$0.338

$0.331

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Microchip USA

USA . 5,474 parts In-Stock

1+ parts

$1.900

100+ parts

$1.880

1k+ parts

$1.880

10k+ parts

$1.870

5,474

$1.900

$1.880

$1.880

$1.870

Perfect Parts

USA . 96,105 parts In-Stock

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96,105

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

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$0.447

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3,000

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$0.447

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Eastek

USA . 3,000 parts In-Stock

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Lixinc

USA . 1,488 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 500 parts In-Stock

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500

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Resion (Excess)

USA . 250 parts In-Stock

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250

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GreenTree Electronics

Israel . 52 parts In-Stock

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Overview

Elevate your electronic designs with the ZXMP2120FFTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Field Effect Transistors that excel in SWITCHING applications. The P-CHANNEL configuration and ENHANCEMENT MODE operation ensure seamless performance, while the high DS Breakdown Voltage of 200 V provides added reliability. With its compact package and built-in diode, this transistor offers convenience and efficiency in your projects. Trust Diodes Incorporated to provide innovative solutions that elevate your work to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the transistor in various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors offer low power consumption and high efficiency, making them a great choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse current flow, enhancing the performance of the transistor.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor provides fast and efficient operation in electronic circuits.

Surface Mount: YES

The surface mount feature allows for easy and reliable mounting on PCBs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 200 V

With a high breakdown voltage, this transistor can handle high voltages safely, ensuring long-term reliability.

Package Shape: RECTANGULAR

The rectangular package shape is space-saving and easy to handle during assembly, making it a practical choice for compact designs.

Terminal Form: FLAT

The flat terminal form facilitates easy soldering and connection, ensuring a secure and reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation ensures precise control and high performance in various switching applications.

No. of Terminals: 3

The three terminals provide versatile connectivity options, allowing for flexible circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and makes the transistor suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures the transistor can withstand harsh environmental conditions without compromising performance.

Transistor Element Material: SILICON

Silicon transistors offer excellent electrical properties, ensuring high reliability and performance in electronic circuits.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in various applications.

Maximum Drain Current (ID): 0.137 A

The high maximum drain current rating allows for reliable operation in high-power circuits without the risk of overheating.

Maximum Drain-Source On Resistance: 28 ohm

The low on-resistance minimizes power loss and heat generation, ensuring efficient operation of the transistor.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout and simplifies circuit design, providing ease of integration.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature allows for reliable soldering during assembly, ensuring a strong and durable connection.

Peak Reflow Temperature °C: 260

The peak reflow temperature ensures proper soldering and bonding of the transistor to the PCB, ensuring reliability in various operating conditions.

Maximum Feedback Capacitance (Crss): 7 pF

The low feedback capacitance reduces signal distortion and enhances the high-frequency performance of the transistor, making it suitable for high-speed applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMP2120FFTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.137 A

Maximum Drain-Source On Resistance:

28 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7 pF

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMP2120FFTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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