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ZXMP10A13FQTC

Diodes Incorporated

ZXMP10A13FQTC by Diodes Incorporated

ZXMP10A13FQTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, 0.7A Drain Current, and 1 ohm On Resistance. Ideal for SWITCHING applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation at up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,145 parts In-Stock

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1,145

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,782 parts In-Stock

1+ parts

$1.660

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3,782

$1.660

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Corohmni

South Africa . 397 parts In-Stock

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$1.981

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397

$1.981

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Ampacity Inc.

Singapore . 596 parts In-Stock

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$10.050

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596

$10.050

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AZTECH Wire

Italy . 572 parts In-Stock

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$13.701

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572

$13.701

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Semicontronic

India . 924 parts In-Stock

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$30.050

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$29.299

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$29.148

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924

$30.050

$29.299

$29.148

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Argo Parts USA

USA . 2,548 parts In-Stock

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2,548

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Continental Prestige Electronics

USA . 2,334 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Enhance your electronics projects with the ZXMP10A13FQTC by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-quality products that deliver exceptional performance. This P-CHANNEL small signal field effect transistor is perfect for switching applications, offering reliability and efficiency. With a minimum DS breakdown voltage of 100V and maximum drain current of 0.7A, this transistor provides the power and stability you need for your projects. Trust Diodes Incorporated to provide you with the best components for your electronic designs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material makes this transistor lightweight and durable.

Polarity or Channel Type:

P-CHANNEL - P-channel transistors are known for their high input impedance and low input leakage currents, making them suitable for many applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit designs and can provide protection against reverse voltage.

Transistor Application:

SWITCHING - Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount:

YES - Easily mountable on PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage:

100 V - With a minimum breakdown voltage of 100 V, this transistor can handle high voltages safely.

Package Shape:

RECTANGULAR - The rectangular shape of the package allows for easy positioning and placement on the circuit board.

Terminal Form:

GULL WING - Gull wing terminals provide a reliable connection and ease of soldering during assembly.

Operating Mode:

ENHANCEMENT MODE - Enhancement mode transistors offer high input impedance and low input currents, ideal for many applications.

Maximum Drain Current (Abs) (ID):

0.7 A - With a maximum drain current of 0.7 A, this transistor can handle moderate power levels efficiently.

No. of Terminals:

3 - The 3 terminals provide flexibility for various circuit configurations.

Maximum Power Dissipation (Abs):

0.806 W - With a maximum power dissipation of 0.806 W, this transistor can dissipate heat effectively.

Package Style (Meter):

SMALL OUTLINE - The small outline package saves space on the PCB and offers easy integration into compact designs.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - MOS technology offers low input capacitance and high input impedance for efficient operation.

Maximum Operating Temperature:

150 °C - With a maximum operating temperature of 150°C, this transistor can operate reliably in high-temperature environments.

Transistor Element Material:

SILICON - Silicon transistors offer high reliability, low leakage, and stable performance over a wide temperature range.

Terminal Finish:

MATTE TIN - Matte tin finish on terminals offers good solderability and corrosion resistance.

Maximum Drain-Source On Resistance:

1 ohm - Low drain-source on resistance of 1 ohm ensures minimal power loss and efficient operation.

Terminal Position:

DUAL - Dual terminal position allows for flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s):

30 - Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliability during soldering processes.

Peak Reflow Temperature °C:

260 - Peak reflow temperature of 260°C allows for reliable soldering and assembly processes.

Reference Standard:

AEC-Q101 - Complies with AEC-Q101 standard for automotive-grade components, ensuring high reliability and quality for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMP10A13FQTC attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.7 A

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMP10A13FQTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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