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ZVN2110ASTOB

Diodes Incorporated

ZVN2110ASTOB by Diodes Incorporated

ZVN2110ASTOB by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.32A max drain current, and 4 ohm max on resistance. Ideal for switching applications due to its single configuration and enhancement mode operation. Package style is in-line with matte tin finish terminals.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Adafruit Industries

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Component Sense

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Vyrian

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Nova Conductors

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Aztec Data Supply Inc.

USA . 3,164 parts In-Stock

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Corohmni

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AZTECH Wire

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Semicontronic

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Component Stockers USA

USA . 538 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Elevate your electronic projects with the ZVN2110ASTOB by Diodes Incorporated. Crafted with precision and quality in mind, this small signal field effect transistor offers unparalleled performance and reliability for a wide range of applications. From switching to enhancement mode operations, this N-channel transistor is designed to meet your needs with utmost efficiency. With a minimum DS breakdown voltage of 100V and maximum drain current of 0.32A, this transistor delivers exceptional results every time. Trust Diodes Incorporated to provide you with cutting-edge technology that enhances your work and amplifies your success. Choose the ZVN2110ASTOB for superior quality and performance in all your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and lower on-resistance compared to P-channel transistors, making them suitable for high-frequency switching applications.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them versatile for a variety of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in ON/OFF control circuits.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100 V, this transistor can handle higher voltages without breakdown, making it suitable for various voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and mounting on circuit boards, optimizing space and design flexibility.

Terminal Form: WIRE

Wire terminals offer a secure and reliable connection, ensuring stable electrical contact in circuit assemblies.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a positive voltage to turn on, providing precise control in switching applications.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in circuits for proper functioning and control of current flow.

Package Style (Meter): IN-LINE

The in-line package style provides a compact and space-saving design, ideal for applications with limited space or where components need to be aligned in a row.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance, low power consumption, and high efficiency in transistor operation, enhancing overall circuit performance.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its high electrical conductivity and reliability, making it ideal for transistor fabrication.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides corrosion resistance and good solderability, ensuring stable connections and long-term reliability in circuit applications.

Maximum Drain Current (ID): 0.32 A

With a maximum drain current of 0.32 A, this transistor can handle current loads effectively, making it suitable for various switching tasks.

Maximum Drain-Source On Resistance: 4 ohm

The low drain-source on resistance of 4 ohms results in minimal power loss and heat generation, improving efficiency and overall performance in switching operations.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper alignment, facilitating easy installation and integration in electronic circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN2110ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN2110ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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