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ZVN2106AM1

Diodes Incorporated

ZVN2106AM1 by Diodes Incorporated

ZVN2106AM1 by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features 60V DS Breakdown Voltage, 0.45A ID, and 2Ω RDS(ON). Utilizes METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with GULL WING terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 590 parts In-Stock

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590

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Aztec Data Supply Inc.

USA . 1,402 parts In-Stock

1+ parts

$0.415

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1,402

$0.415

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Corohmni

South Africa . 168 parts In-Stock

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$0.666

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168

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AZTECH Wire

Italy . 597 parts In-Stock

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$18.623

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597

$18.623

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Continental Prestige Electronics

USA . 3,892 parts In-Stock

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Advanced Electronics

New Zealand . 3,741 parts In-Stock

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Argo Parts USA

USA . 3,549 parts In-Stock

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3,549

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your electronic projects with the ZVN2106AM1 by Diodes Incorporated, a top-tier manufacturer known for producing high-quality components. As part of the Small Signal Field Effect Transistors category, this N-CHANNEL transistor offers reliable performance in various applications such as switching circuits. With a design tailored for enhancement mode operation and a maximum DS Breakdown Voltage of 60V, this transistor ensures efficient functionality and durability. Experience seamless integration with its surface mount capability and benefit from its low on resistance of 2 ohm, making it an essential component for any project requiring precision and reliability. Elevate your designs with the ZVN2106AM1 and unlock endless possibilities in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring longevity and affordability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and faster switching speeds compared to P-channel FETs.

Configuration: SINGLE

Simplifies circuit design and integration, suitable for basic switching applications.

Transistor Application: SWITCHING

Optimized for fast and efficient switching operations, ideal for various electronic devices and circuits.

Surface Mount: YES

Convenient for automated assembly processes and offers space-saving advantages.

Minimum DS Breakdown Voltage: 60 V

Provides a high breakdown voltage, ensuring reliable performance and protection against voltage surges.

Package Shape: RECTANGULAR

Efficient use of space and compatibility with standard packaging methods.

Terminal Form: GULL WING

Facilitates easy soldering and reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement-mode FETs offer precise control over the switching behavior and lower power consumption.

No. of Terminals: 3

Simple and straightforward connection setup, suitable for basic circuit requirements.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications and compatibility with standardized mounting configurations.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and widely used technology with good performance characteristics for various applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, durability, and reliability for electronic circuits.

Maximum Drain Current (ID): 0.45 A

Sufficient current handling capacity for moderate power applications, ensuring reliable operation.

Maximum Drain-Source On Resistance: 2 ohm

Low on-resistance reduces power losses and improves efficiency in switching applications.

Terminal Position: SINGLE

Simplified wiring and connection setup with a single terminal position.

Reference Standard: CECC

Compliance with a recognized industry standard ensures quality and reliability of the product.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN2106AM1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.45 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN2106AM1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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