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ZVN2106ASTOB

Diodes Incorporated

ZVN2106ASTOB by Diodes Incorporated

ZVN2106ASTOB by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.45A ID, and 2 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features SILICON element material in a RECTANGULAR PLASTIC package with Matte Tin finish.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 63,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 28,000 parts In-Stock

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28,000

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Component Sense

UK . 3,998 parts In-Stock

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$0.310

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$0.210

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$0.210

3,998

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$0.210

$0.210

Vyrian

USA . 768 parts In-Stock

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768

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,639 parts In-Stock

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$1.161

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$1.161

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Corohmni

South Africa . 291 parts In-Stock

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$1.437

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AZTECH Wire

Italy . 768 parts In-Stock

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$8.101

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768

$8.101

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Semicontronic

India . 1,467 parts In-Stock

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$60.050

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$58.549

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$58.248

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1,467

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Perfect Parts

USA . 62,720 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 28,000 parts In-Stock

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28,000

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Glotronic Ltd.

UK . 22,400 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,317 parts In-Stock

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Advanced Electronics

New Zealand . 4,311 parts In-Stock

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Argo Parts USA

USA . 2,758 parts In-Stock

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Continental Prestige Electronics

USA . 2,148 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the ZVN2106ASTOB by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated delivers unmatched quality and reliability in every product. Ideal for switching applications, this N-channel transistor offers a breakthrough in performance with its 60V DS breakdown voltage and low on-resistance. Experience seamless operation and enhanced efficiency with the ZVN2106ASTOB - the perfect solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

Offers efficient electron flow and high performance in switching applications.

Configuration: SINGLE

Simplifies circuit design and installation, making it easier to incorporate into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable performance in on/off transitions.

Minimum DS Breakdown Voltage: 60 V

Provides a high breakdown voltage for added safety and reliability in high voltage applications.

Package Shape: RECTANGULAR

Allows for easy and compact integration into circuit boards, saving valuable space.

Terminal Form: WIRE

Simplifies connections and allows for easy soldering or wire attachment during installation.

Operating Mode: ENHANCEMENT MODE

Ensures efficient control of the transistor's conductivity, enhancing overall performance in a variety of applications.

No. of Terminals: 3

Provides necessary connections for proper functionality while keeping the design simple and user-friendly.

Package Style (Meter): IN-LINE

Facilitates easy placement and installation in linear configurations, enhancing versatility.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption, ideal for energy-efficient electronic devices.

Transistor Element Material: SILICON

Ensures high performance and reliability, making it suitable for various demanding applications.

Terminal Finish: Matte Tin (Sn)

Provides a corrosion-resistant finish for reliable connections and long-term performance.

Maximum Drain Current (ID): 0.45 A

Handles high drain currents, making it suitable for applications requiring significant power output.

Maximum Drain-Source On Resistance: 2 ohm

Offers low resistance for efficient power flow and minimal heat generation, maximizing performance.

Terminal Position: SINGLE

Simplifies installation and ensures proper connections, reducing the risk of wiring errors.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN2106ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.45 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN2106ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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