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ZVN0124A

Diodes Incorporated

ZVN0124A by Diodes Incorporated

ZVN0124A by Diodes Inc. is a N-CHANNEL FET with 240V DS Breakdown Voltage and 0.16A Drain Current. Ideal for applications requiring low power dissipation, it operates in Enhancement Mode with 16ohm On Resistance. Its package style is IN-LINE, making it suitable for various small signal circuit designs.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,734 parts In-Stock

1+ parts

$1.150

100+ parts

$0.439

1k+ parts

$0.328

10k+ parts

$0.273

3,734

$1.150

$0.439

$0.328

$0.273

Newark

USA . 2,731 parts In-Stock

1+ parts

$1.180

100+ parts

$0.452

1k+ parts

$0.338

10k+ parts

-

2,731

$1.180

$0.452

$0.338

-

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.236

16,000

-

-

-

$0.236

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.358

-

-

-

Chip Stock

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,000

-

-

-

-

Vyrian

USA . 8,896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,896

-

-

-

-

Ack Elektronik San.Tic.Ltd.Sti

. 389 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

389

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 1,434 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

-

10k+ parts

$0.347

1,434

$0.358

-

-

$0.347

Continental Prestige Electronics

USA . 879 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

-

10k+ parts

$0.351

879

$0.358

-

-

$0.351

Ampacity Inc.

Singapore . 8,988 parts In-Stock

1+ parts

$0.437

100+ parts

-

1k+ parts

-

10k+ parts

-

8,988

$0.437

-

-

-

Kepictronics

USA . 5,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,800

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.351

1k+ parts

$0.340

10k+ parts

$0.333

500

-

$0.351

$0.340

$0.333

Overview

Discover the power of the ZVN0124A by Diodes Incorporated, a top-of-the-line Small Signal Field Effect Transistor (FET) that delivers unparalleled performance and reliability. With a reputation for excellence in manufacturing, Diodes Incorporated ensures that this N-CHANNEL FET exceeds industry standards. Ideal for a variety of applications, including amplifiers and signal processing circuits, this product offers customers exceptional value, benefits, and advantages. Elevate your projects with the ZVN0124A and experience unmatched quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection to the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in high power applications which makes this transistor suitable for a variety of circuit designs.

Minimum DS Breakdown Voltage: 240 V

With a high minimum breakdown voltage, this transistor can handle higher voltages in circuit applications.

Configuration: SINGLE

Single configuration makes it easy to integrate this transistor into different circuit designs.

Maximum Drain Current (ID): 0.16 A

With a maximum drain current of 0.16 A, this transistor can handle moderate current levels effectively.

Maximum Power Dissipation (Abs): 0.7 W

Efficient power dissipation of 0.7 W allows the transistor to operate without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high efficiency and reliability in transistor performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Maximum Drain-Source On Resistance: 16 ohm

Low on-resistance ensures efficient power transfer and minimal heat generation in the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN0124A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (Abs) (ID):

.16 A

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7 pF

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

ZVN0124A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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