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ZVN0545ASTOA

Diodes Incorporated

ZVN0545ASTOA by Diodes Incorporated

ZVN0545ASTOA by Diodes Inc. is a N-CHANNEL FET with 450V DS breakdown voltage, ideal for SWITCHING applications. Features include 50 ohm RDS(on), 0.09A ID, and ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material and Matte Tin finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 998 parts In-Stock

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998

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 290 parts In-Stock

1+ parts

$1.106

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290

$1.106

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Aztec Data Supply Inc.

USA . 4,382 parts In-Stock

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$1.907

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$1.907

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AZTECH Wire

Italy . 383 parts In-Stock

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$17.798

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383

$17.798

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Semicontronic

India . 1,321 parts In-Stock

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$35.050

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$34.174

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$33.998

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1,321

$35.050

$34.174

$33.998

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Perfect Parts

USA . 4,480 parts In-Stock

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4,480

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Argo Parts USA

USA . 2,417 parts In-Stock

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2,417

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Continental Prestige Electronics

USA . 707 parts In-Stock

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707

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Experience the exceptional quality and reliability of the ZVN0545ASTOA by Diodes Incorporated, a leading manufacturer in the industry. This small signal field effect transistor offers unparalleled performance for switching applications with its N-channel configuration and 450V minimum DS breakdown voltage. With a matte tin finish and SILICON element material, this transistor ensures efficient operation and durability. Enhance your projects with the value and benefits of this high-quality product, designed to meet your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: N-CHANNEL

An N-channel transistor allows for efficient current flow, making it suitable for high performance switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances reliability by reducing the number of components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient performance.

Minimum DS Breakdown Voltage: 450 V

With a high breakdown voltage, this transistor can withstand high voltages, making it reliable and suitable for high voltage applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into circuit designs.

Terminal Form: WIRE

The wire terminals provide a secure connection, ensuring stable performance in various environmental conditions.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enhances control over the transistor, allowing for precise switching capabilities.

No. of Terminals: 3

The three terminals provide flexibility in circuit design and compatibility with various configurations.

Package Style (Meter): IN-LINE

The in-line package style saves space and simplifies assembly, making it suitable for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology, this transistor offers high efficiency and low power consumption.

Transistor Element Material: SILICON

Silicon material ensures reliability and stability in performance, making this transistor a dependable choice.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on the terminals offers corrosion resistance and ensures long-term reliability.

Maximum Drain Current (ID): 0.09 A

This transistor can handle a maximum drain current of 0.09A, suitable for low to medium power applications.

Maximum Drain-Source On Resistance: 50 ohm

The low on-resistance of 50 ohm ensures efficient switching and minimal power loss.

Terminal Position: SINGLE

The single terminal position simplifies installation and enhances reliability by reducing potential points of failure.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN0545ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

450 V

Maximum Drain Current (ID):

.09 A

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN0545ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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