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MMBZ9V1AL-7-F

Diodes Incorporated

MMBZ9V1AL-7-F by Diodes Incorporated

MMBZ9V1AL-7-F by Diodes Inc. is a transient suppression device with common anode config, 2 elements, and max non-repetitive peak reverse power dissipation of 24W. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.109

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.109

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650

$0.109

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Vyrian

USA . 3,442 parts In-Stock

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3,442

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Semi Source

USA . 2,702 parts In-Stock

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2,702

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Bristol Electronics

USA . 2,457 parts In-Stock

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2,457

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Dan-Mar Components

USA . 2,457 parts In-Stock

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2,457

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J2 Sourcing AB

Sweden . 2,000 parts In-Stock

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2,000

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Distributors (Availability)

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Argo Parts USA

USA . 4,327 parts In-Stock

1+ parts

$0.109

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$0.106

4,327

$0.109

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$0.106

Continental Prestige Electronics

USA . 803 parts In-Stock

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$0.109

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$0.107

803

$0.109

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$0.107

Netroflash

USA . 500 parts In-Stock

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$0.109

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500

$0.109

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Corohmni

South Africa . 18 parts In-Stock

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$0.124

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18

$0.124

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Aztec Data Supply Inc.

USA . 466 parts In-Stock

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$0.136

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466

$0.136

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Ampacity Inc.

Singapore . 551 parts In-Stock

1+ parts

$3.010

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551

$3.010

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AZTECH Wire

Italy . 815 parts In-Stock

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$7.476

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815

$7.476

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Perfect Parts

USA . 116,483 parts In-Stock

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Kepictronics

USA . 11,900 parts In-Stock

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Lixinc

USA . 10,291 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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GreenTree Electronics

Israel . 210 parts In-Stock

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Overview

Protect your electronic devices with the MMBZ9V1AL-7-F by Diodes Incorporated. As a leading manufacturer in transient suppression devices, Diodes Incorporated ensures top-quality products for all your voltage protection needs. With applications ranging from consumer electronics to industrial equipment, this diode offers unrivaled reliability and performance. Trust in the value and benefits of the MMBZ9V1AL-7-F to safeguard your investments and keep your devices running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the electronic components inside, making the product durable and reliable.

Config: COMMON ANODE, 2 ELEMENTS

Having common anode configuration with 2 elements allows for effective suppression of voltage spikes in circuits.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

The high power dissipation capability ensures that the device can handle sudden high voltage surges without getting damaged.

Nominal Breakdown Voltage: 9.1 V

The specific breakdown voltage helps in protecting downstream circuitry by clamping excess voltage effectively.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function in various environments without compromising its performance.

Terminal Finish: MATTE TIN

The matte tin finish provides good conductivity and solderability, ensuring a secure connection in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, it can quickly respond to voltage spikes and divert excess current away from sensitive components.

Technical Specifications

Transient Suppression Devices MMBZ9V1AL-7-F attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

9.56 V

Minimum Breakdown Voltage:

8.65 V

Nominal Breakdown Voltage:

9.1 V

Maximum Clamping Voltage:

14 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ9V1AL-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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