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MMBZ10VAL-7-F

Diodes Incorporated

MMBZ10VAL-7-F by Diodes Incorporated

Diodes Inc. MMBZ10VAL-7-F is a TRANS VOLTAGE SUPPRESSOR DIODE with 10V Breakdown Voltage, 24W Peak Power Dissipation, and 14.2V Clamping Voltage. Commonly used for transient suppression in electronic circuits due to its UNIDIRECTIONAL polarity and AVALANCHE technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 25,000 parts In-Stock

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Vyrian

USA . 7,024 parts In-Stock

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4 Star Electronics, Inc.

USA . 752 parts In-Stock

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752

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Nova Conductors

Japan . 63 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,467 parts In-Stock

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$0.050

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$0.050

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Corohmni

South Africa . 13 parts In-Stock

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$0.110

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Ampacity Inc.

Singapore . 744 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 492 parts In-Stock

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$2.010

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$1.960

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$1.950

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492

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AZTECH Wire

Italy . 391 parts In-Stock

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$14.075

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Component Stockers USA

USA . 557 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Futuretech Components

Singapore . 18,000 parts In-Stock

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Lixinc

USA . 13,970 parts In-Stock

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Continental Prestige Electronics

USA . 6,214 parts In-Stock

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RC Electronics

USA . 6,000 parts In-Stock

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Perfect Parts

USA . 5,528 parts In-Stock

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Argo Parts USA

USA . 1,163 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the power of reliable transient suppression with the MMBZ10VAL-7-F by Diodes Incorporated. Manufactured with top-notch quality and precision, this TRANS VOLTAGE SUPPRESSOR DIODE offers superior protection against voltage spikes and surges. Ideal for a wide range of applications, this common anode device provides peace of mind with its high reliability and performance. Trust in Diodes Incorporated to deliver cutting-edge technology that ensures your electronics are safeguarded at all times. Experience the value and benefits of the MMBZ10VAL-7-F today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against external elements, ensuring long-term reliability.

Config: COMMON ANODE, 2 ELEMENTS

Allows for effective suppression of transient voltages across both elements, providing increased protection.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and effort.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

Capable of handling high power surges without damage, ensuring optimal performance under extreme conditions.

Nominal Breakdown Voltage: 10 V

Provides protection against voltage spikes above the specified threshold, safeguarding connected components.

Maximum Operating Temperature: 150 °C

Can function in high-temperature environments without compromising performance, ensuring reliability in various conditions.

Minimum Operating Temperature: -65 °C

Capable of operating in low-temperature environments, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish, enhancing the overall durability of the product.

No. of Elements: 2

Dual elements provide redundancy and increased protection, reducing the risk of failure under high-voltage conditions.

Technical Specifications

Transient Suppression Devices MMBZ10VAL-7-F attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

14.2 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ10VAL-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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