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FZT790ATA

Diodes Incorporated

FZT790ATA by Diodes Incorporated

FZT790ATA by Diodes Inc. is a PNP BJT transistor with 4 terminals, capable of handling up to 3A collector current and 40V collector-emitter voltage. With a min DC current gain of 300, it's ideal for switching applications at temperatures up to 150°C. The package style is small outline, making it suitable for surface mount designs requiring high power dissipation of up to 2W.

Median Price

$0.548

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Adafruit Industries

USA . 100 parts In-Stock

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$0.636

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$0.579

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$0.522

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$0.636

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Mouser Electronics

USA . 9,943 parts In-Stock

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$1.540

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$0.647

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$0.438

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9,943

$1.540

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Master Electronics

USA . 2,309 parts In-Stock

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$2.850

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$0.912

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$0.320

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$0.303

2,309

$2.850

$0.912

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$0.303

DigiKey

USA . 5,407 parts In-Stock

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$0.461

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$0.357

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Arrow

USA . 48 parts In-Stock

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$0.192

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Verical

USA . 48 parts In-Stock

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$0.122

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.344

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$0.344

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Bristol Electronics

USA . 2,982 parts In-Stock

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$0.861

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$0.319

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$0.224

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$0.861

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NAC Semi

USA . 82,000 parts In-Stock

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$0.470

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Chip Stock

USA . 17,000 parts In-Stock

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Vyrian

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Dan-Mar Components

USA . 2,982 parts In-Stock

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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Atlantic Semiconductor

USA . 1,638 parts In-Stock

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Ashlea Components Ltd

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980

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Semi Source

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ECAB

Sweden . 900 parts In-Stock

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Sea View Technologies

USA . 896 parts In-Stock

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PC Components Company LLC

USA . 700 parts In-Stock

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ComSIT Distribution GmbH

Germany . 576 parts In-Stock

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Euro-Tech

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LIBRA Elektronik GmbH

Germany . 344 parts In-Stock

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Argo Parts USA

USA . 2,716 parts In-Stock

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$0.344

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$0.334

2,716

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Continental Prestige Electronics

USA . 239 parts In-Stock

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$0.344

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$0.337

239

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.636

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$0.579

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$0.522

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100

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Aztec Data Supply Inc.

USA . 11,275 parts In-Stock

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$0.646

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Corohmni

South Africa . 126 parts In-Stock

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Perfect Parts

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GreenTree Electronics

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Eastek

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Lixinc

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Cyclops Electronics Ltd (Excess)

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Kepictronics

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S.R.D Solutions

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Glotronic Ltd.

UK . 644 parts In-Stock

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Authorized Procurement Solutions

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Netroflash

USA . 50 parts In-Stock

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$0.327

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$0.320

50

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$0.337

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$0.320

Overview

Elevate your power management solutions with the FZT790ATA by Diodes Incorporated. Known for their high-quality products, Diodes Incorporated offers this PNP Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 40V and a small outline package style, this transistor provides reliable performance in a compact design. Whether you're designing automotive electronics, industrial controls, or consumer appliances, the FZT790ATA delivers the value, benefits, and advantages you need to take your projects to the next level. Trust Diodes Incorporated for top-notch components that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for the product, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for efficient switching capabilities in the circuit design.

Configuration: SINGLE

Simplifies the circuit layout and makes it easy to integrate into the system.

Maximum Power Dissipation (Abs): 2 W

Can handle higher power dissipation levels, ensuring stable performance under challenging conditions.

Maximum Collector-Emitter Voltage: 40 V

Provides a high voltage rating, making it suitable for switching applications that require higher voltage handling.

Maximum Collector Current (IC): 3 A

Capable of handling higher currents, allowing for efficient switching operations.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT790ATA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT790ATA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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