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FZT749TA

Diodes Incorporated

FZT749TA by Diodes Incorporated

FZT749TA by Diodes Inc. is a PNP power BJT transistor with a max collector-emitter voltage of 25V and a max collector current of 3A. It is commonly used for switching applications due to its small outline package style and high transition frequency of 160MHz.

Median Price

$0.718

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 999 parts In-Stock

1+ parts

$1.170

100+ parts

$0.482

1k+ parts

$0.340

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$0.259

999

$1.170

$0.482

$0.340

$0.259

Mouser Electronics

USA . 8,269 parts In-Stock

1+ parts

$1.200

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$0.493

1k+ parts

$0.347

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8,269

$1.200

$0.493

$0.347

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Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$1.369

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$1.300

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$1.300

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70

$1.369

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$1.300

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Arrow

USA . 26,000 parts In-Stock

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$0.197

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$0.197

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Verical

USA . 12,000 parts In-Stock

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$0.250

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Rochester

USA . 586 parts In-Stock

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$0.265

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$0.220

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586

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Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 844 parts In-Stock

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$0.191

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844

$0.191

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Nova Conductors

Japan . 10 parts In-Stock

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$0.339

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10

$0.339

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 66,225 parts In-Stock

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Bristol Electronics

USA . 17,596 parts In-Stock

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$0.487

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$0.210

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$0.195

17,596

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$0.487

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$0.195

Dan-Mar Components

USA . 13,000 parts In-Stock

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Vyrian

USA . 12,974 parts In-Stock

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Cyclops Electronics Ltd

UK . 12,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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Chip Stock

USA . 8,500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

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Q Components

USA . 3,490 parts In-Stock

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Holdelec - ElecDif-Pro

France . 3,000 parts In-Stock

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Connector Distribution Corp

USA . 2,570 parts In-Stock

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2,570

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Right Parts Inc.

USA . 2,570 parts In-Stock

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2,570

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Prism Electronics

USA . 2,495 parts In-Stock

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2,495

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Sensible Micro Corp

USA . 2,000 parts In-Stock

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NAC Semi

USA . 2,000 parts In-Stock

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.540

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$0.323

2,000

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$0.540

$0.323

A2Z Electronics, Inc.

USA . 1,902 parts In-Stock

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ABC Electronics Ltd.

UK . 1,700 parts In-Stock

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Speed Components Ltd

Israel . 1,500 parts In-Stock

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TME

Poland . 1,000 parts In-Stock

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$0.235

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1,000

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Flip Electronics

USA . 1,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 1,000 parts In-Stock

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Inventory MP

USA . 942 parts In-Stock

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942

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Semi Source

USA . 937 parts In-Stock

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937

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North Shore Components

USA . 806 parts In-Stock

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R&J Components

USA . 700 parts In-Stock

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700

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PC Components Company LLC

USA . 600 parts In-Stock

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600

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Rutronik

Germany . 482 parts In-Stock

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$0.259

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$0.219

482

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$0.219

Semtec, LLC

USA . 33 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 12,888 parts In-Stock

1+ parts

$0.167

100+ parts

$0.163

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$0.162

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12,888

$0.167

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Decca Corp

Germany . 11,295 parts In-Stock

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$0.167

100+ parts

$0.164

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$0.162

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11,295

$0.167

$0.164

$0.162

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Continental Prestige Electronics

USA . 4,936 parts In-Stock

1+ parts

$0.339

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$0.332

4,936

$0.339

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$0.332

Argo Parts USA

USA . 3,332 parts In-Stock

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$0.339

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$0.329

3,332

$0.339

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$0.329

Modulus Dynamics

Lithuania . 6,517 parts In-Stock

1+ parts

$0.414

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$0.414

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$0.414

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6,517

$0.414

$0.414

$0.414

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Aztec Data Supply Inc.

USA . 1,397 parts In-Stock

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$0.886

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1,397

$0.886

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$1.369

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$1.300

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$1.300

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70

$1.369

$1.300

$1.300

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Corohmni

South Africa . 244 parts In-Stock

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$1.482

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244

$1.482

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 16,727 parts In-Stock

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Kepictronics

USA . 12,000 parts In-Stock

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Glotronic Ltd.

UK . 8,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,730 parts In-Stock

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8,730

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Lixinc

USA . 7,568 parts In-Stock

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7,568

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Cyclops Electronics Ltd (Excess)

UK . 4,942 parts In-Stock

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4,942

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Eastek

USA . 2,000 parts In-Stock

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$0.221

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2,000

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$0.221

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Assy Fe

Spain . 1,600 parts In-Stock

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1,600

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iodParts Technologies Inc.

India . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.272

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1,000

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$0.272

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GreenTree Electronics

Israel . 956 parts In-Stock

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956

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Allen Electronics Distributors

USA . 470 parts In-Stock

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$0.467

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470

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$0.467

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Overview

Upgrade your electronics with the FZT749TA by Diodes Incorporated, a power bipolar junction transistor designed for switching applications. Manufactured by the trusted brand Diodes Incorporated, this product guarantees top-quality performance and reliability. With its PNP polarity and single configuration, it is perfect for various electronic projects. Its small outline package and gull wing terminals make installation a breeze. Offering a maximum collector current of 3A and maximum power dissipation of 3W, this transistor delivers powerful results. Upgrade your devices today with the FZT749TA and experience enhanced efficiency and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This Power BJT's plastic/epoxy package body material ensures durability and protection, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP polarity or channel type of this BJT allows for efficient and reliable switching operations.

Configuration: SINGLE

With a single configuration, this Power BJT simplifies circuit design and increases overall efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this Power BJT delivers optimized performance and reliability.

Surface Mount: YES

The surface mount capability of this Power BJT allows for easy and convenient integration into various circuit board layouts.

Package Shape: RECTANGULAR

The rectangular package shape of this BJT enables efficient space utilization and compatibility with standard mounting techniques.

Terminal Form: GULL WING

The gull wing terminal form ensures reliable and secure connections, making this Power BJT suitable for demanding applications.

No. of Elements: 1

With a single element, this BJT simplifies circuit design and offers consistent performance.

No. of Terminals: 4

The 4 terminals provide flexibility and allow for easy connection and integration within circuits.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3 W, this Power BJT can handle high power demands, making it ideal for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compactness and ease of integration into space-constrained designs.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Power BJT can withstand high-temperature environments, enhancing its reliability.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25 V allows for handling higher voltage applications, expanding the range of possible uses for this Power BJT.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures high performance and durability.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this Power BJT can handle high current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers corrosion resistance and facilitates soldering, ensuring reliable connections.

Terminal Position: DUAL

With a dual terminal position, this Power BJT provides flexibility in circuit layouts and offers reliable connectivity.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level of 1 ensures the BJT's reliability even in humid environments.

Case Connection: COLLECTOR

The case connection to the collector enhances the thermal conductivity and improves overall performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this Power BJT simplifies assembly and ensures efficient manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures reliable soldering during assembly, enhancing the product's durability.

Nominal Transition Frequency (fT): 160 MHz

With a high nominal transition frequency of 160 MHz, this Power BJT allows for fast and efficient switching operations in a wide range of applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT749TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT749TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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