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FZT753

Diodes Incorporated

FZT753 by Diodes Incorporated

FZT753 by Diodes Inc. is a PNP BJT transistor with 100V VCEO, 2A IC, and 2W power dissipation. Ideal for switching applications, it operates b/w -55°C to 150°C with a transition frequency of 140MHz. This surface-mount device has a Gull Wing terminal form in a small outline package shape.

Median Price

$0.623

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,019 parts In-Stock

1+ parts

$0.863

100+ parts

$0.516

1k+ parts

-

10k+ parts

-

1,019

$0.863

$0.516

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Farnell

UK . 1,035 parts In-Stock

1+ parts

-

100+ parts

$0.355

1k+ parts

$0.251

10k+ parts

-

1,035

-

$0.355

$0.251

-

Element14

Singapore . 1,035 parts In-Stock

1+ parts

-

100+ parts

$0.623

1k+ parts

$0.412

10k+ parts

-

1,035

-

$0.623

$0.412

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.417

100+ parts

-

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10

$0.417

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Vyrian

USA . 4,263 parts In-Stock

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4,263

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Microfarads

USA . 853 parts In-Stock

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853

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EMSNET

USA . 475 parts In-Stock

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475

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ComSIT Distribution GmbH

Germany . 472 parts In-Stock

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472

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Ack Elektronik San.Tic.Ltd.Sti

. 100 parts In-Stock

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100

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,838 parts In-Stock

1+ parts

$0.258

100+ parts

$0.252

1k+ parts

$0.250

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-

3,838

$0.258

$0.252

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.409

100+ parts

-

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$0.393

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100

$0.409

-

$0.393

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Argo Parts USA

USA . 3,584 parts In-Stock

1+ parts

$0.417

100+ parts

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$0.405

3,584

$0.417

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$0.405

Aztec Data Supply Inc.

USA . 4,552 parts In-Stock

1+ parts

$0.938

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4,552

$0.938

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Corohmni

South Africa . 23 parts In-Stock

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$1.341

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23

$1.341

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Lixinc

USA . 10,334 parts In-Stock

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10,334

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Continental Prestige Electronics

USA . 4,633 parts In-Stock

1+ parts

-

100+ parts

$0.392

1k+ parts

$0.255

10k+ parts

$0.239

4,633

-

$0.392

$0.255

$0.239

Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Infinite Electronics LLP (Excess)

. 416 parts In-Stock

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416

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Overview

Enhance your electronic designs with the FZT753 by Diodes Incorporated, a top-quality Power Bipolar Junction Transistor perfect for switching applications. With a maximum collector-emitter voltage of 100V and a peak reflow temperature of 260°C, this PNP transistor ensures reliability and performance. Manufactured by industry leader Diodes Incorporated, the FZT753 offers exceptional value and benefits, making it an ideal choice for a wide range of electronic projects. Upgrade your circuits today with the FZT753 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing its durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility for various circuit designs.

Configuration: SINGLE

Simplified circuit design and easy integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Ideal for automated assembly processes and compact designs, saving space on the PCB.

Maximum Power Dissipation (Abs): 2 W

Can handle higher power levels without overheating, suitable for various power applications.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation or failure.

Maximum Collector-Emitter Voltage: 100 V

Can handle higher voltages safely, providing protection against voltage spikes or fluctuations.

Minimum DC Current Gain (hFE): 25

Consistent and reliable performance with a minimum current gain value, ensuring stable operation.

Nominal Transition Frequency (fT): 140 MHz

High switching speed allows for quick response times in switching applications, improving overall efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT753 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT753 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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