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FZT788BTC

Diodes Incorporated

FZT788BTC by Diodes Incorporated

FZT788BTC by Diodes Inc. is a PNP BJT transistor with 4 terminals, capable of handling 3A collector current and 2W power dissipation. It operates at up to 150°C, ideal for switching applications in small outline packages. With a min hFE of 150 and fT of 100MHz, it offers efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 625 parts In-Stock

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625

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 742 parts In-Stock

1+ parts

$1.113

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742

$1.113

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Aztec Data Supply Inc.

USA . 3,257 parts In-Stock

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$1.220

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$1.220

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AZTECH Wire

Italy . 600 parts In-Stock

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$17.076

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600

$17.076

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Argo Parts USA

USA . 2,969 parts In-Stock

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2,969

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Continental Prestige Electronics

USA . 1,752 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Enhance your electronic designs with the FZT788BTC by Diodes Incorporated, a high-quality Power Bipolar Junction Transistor perfect for switching applications. With its PNP polarity, small outline package style, and impressive 2W power dissipation, this transistor offers reliability and efficiency. Whether you're working on consumer electronics, automotive systems, or industrial equipment, this product ensures seamless performance and durability. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the FZT788BTC today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits where PNP transistors are needed, expanding the versatility of the product.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces complexity, making it easier to use in different projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for controlling power in various electronic devices.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels without overheating, ensuring reliability in demanding conditions.

Maximum Collector Current (IC): 3 A

The high maximum collector current allows this transistor to handle heavy loads, making it suitable for power-hungry applications.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency makes this transistor fast and responsive, enabling efficient signal amplification and switching at high frequencies.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT788BTC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT788BTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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