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FZT751TA-83

Diodes Incorporated

FZT751TA-83 by Diodes Incorporated

FZT751TA-83 by Diodes Inc. is a PNP BJT transistor with 60V VCE, 3A IC, and 140MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a min hFE of 40, this silicon-based transistor offers efficient performance in various electronic circuits.

Median Price

$0.113

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.113

10k+ parts

$0.103

45,000

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-

$0.113

$0.103

Distributors (In-Stock)

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Vyrian

USA . 44,875 parts In-Stock

1+ parts

-

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44,875

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 44,816 parts In-Stock

1+ parts

$0.096

100+ parts

-

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44,816

$0.096

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Aztec Data Supply Inc.

USA . 12,690 parts In-Stock

1+ parts

$0.728

100+ parts

-

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12,690

$0.728

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Corohmni

South Africa . 206 parts In-Stock

1+ parts

$1.359

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206

$1.359

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Lixinc

USA . 7,047 parts In-Stock

1+ parts

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7,047

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Continental Prestige Electronics

USA . 3,935 parts In-Stock

1+ parts

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3,935

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Argo Parts USA

USA . 90 parts In-Stock

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90

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Bastille Electronics

Australia . 43 parts In-Stock

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43

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Overview

Enhance your power switching applications with the FZT751TA-83 by Diodes Incorporated. Known for their top-notch quality and reliability, Diodes Incorporated delivers yet again with this PNP Power BJT. Perfect for a wide range of switching needs, this transistor offers customers exceptional performance and efficiency. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 140MHz, the FZT751TA-83 is the perfect choice for all your power switching requirements. Trust Diodes Incorporated to provide you with the best in power transistors for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for easy integration into circuits that require PNP transistors.

Configuration: SINGLE

Simplifies circuit design and layout by having a single transistor in the package.

Transistor Application: SWITCHING

Designed for high-speed switching applications, making it efficient and reliable.

Surface Mount: YES

Enables easy and efficient mounting onto PCBs for compact and space-saving designs.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment on the circuit board.

Terminal Form: GULL WING

Provides a secure and reliable connection to the PCB.

No. of Terminals: 4

Simplifies the soldering process and reduces chances of errors during assembly.

Package Style (Meter): SMALL OUTLINE

Compact size allows for efficient use of space on the PCB.

Minimum DC Current Gain (hFE): 40

Ensures consistent performance and amplification of signals in the circuit.

Maximum Collector-Emitter Voltage: 60 V

Provides flexibility for different voltage requirements in the application.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other material options.

Maximum Collector Current (IC): 3 A

Capable of handling high currents, making it suitable for power applications.

Terminal Finish: MATTE TIN

Ensures good solderability and long-term stability of the connections.

Terminal Position: DUAL

Allows for versatile placement and routing of connections on the PCB.

Case Connection: COLLECTOR

Simplifies the circuit configuration by having the collector connection specified.

Nominal Transition Frequency (fT): 140 MHz

Indicates the speed at which the transistor can operate, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT751TA-83 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT751TA-83 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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