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FZT651

Diodes Incorporated

FZT651 by Diodes Incorporated

FZT651 by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 3A IC, and 175MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 2W and operating temp up to 150°C, it's suitable for various electronic designs.

Median Price

$0.100

Lifecycle Status

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1k+

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Newark

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Ack Elektronik San.Tic.Ltd.Sti

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Vyrian

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Tectiva GmbH

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Electronic Expediters

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Nova Conductors

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Prism Electronics

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LWI Electronics Inc

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LIBRA Elektronik GmbH

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Component Sense

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Lixinc

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Upgrade your power control with the FZT651 by Diodes Incorporated. This high-quality Power Bipolar Junction Transistor offers unmatched reliability and performance for switching applications. With its NPN configuration and small outline package style, the FZT651 is designed to deliver optimal power dissipation and collector current. Trust Diodes Incorporated to provide cutting-edge technology in a compact, cost-effective solution that meets all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the transistor suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, offering high efficiency and reliability.

Configuration: SINGLE

Simplified design with single configuration makes it easy to implement in circuits and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount design allows for easy installation on circuit boards, saving space and facilitating mass production.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, reducing the risk of disconnection in operation.

Maximum Power Dissipation (Abs): 2 W

Higher power dissipation allows for handling larger loads and ensures the transistor can operate effectively under high power conditions.

Package Shape: RECTANGULAR

Rectangular shape is common and easily mounted on PCBs, facilitating assembly in various electronic devices.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and ensures strong bond during assembly, enhancing reliability.

Nominal Transition Frequency (fT): 175 MHz

High transition frequency allows for fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT651 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT651 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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