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FZT600TA

Diodes Incorporated

FZT600TA by Diodes Incorporated

FZT600TA by Diodes Inc. is a NPN Darlington BJT transistor with 2A max collector current, 140V max collector-emitter voltage, and 1000 min DC current gain. Ideal for switching applications in small outline packages, it operates up to 150°C with a transition frequency of 250MHz.

Median Price

$0.384

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15,778 parts In-Stock

1+ parts

$1.090

100+ parts

$0.445

1k+ parts

$0.312

10k+ parts

$0.236

15,778

$1.090

$0.445

$0.312

$0.236

Mouser Electronics

USA . 3,442 parts In-Stock

1+ parts

$1.090

100+ parts

$0.405

1k+ parts

$0.299

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3,442

$1.090

$0.405

$0.299

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Verical

USA . 4,000 parts In-Stock

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$0.384

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4,000

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$0.384

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Arrow

USA . 3,000 parts In-Stock

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$0.280

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$0.228

3,000

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$0.280

$0.228

Future Electronics

Canada . 1,000 parts In-Stock

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$0.325

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$0.310

1,000

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$0.325

$0.310

Distributors (In-Stock)

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.341

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1,000

$0.341

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TME

Poland . 1,950 parts In-Stock

1+ parts

$1.010

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$0.377

1k+ parts

$0.295

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1,950

$1.010

$0.377

$0.295

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Component Electronics Inc.

Canada . 480 parts In-Stock

1+ parts

$1.150

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$0.870

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$0.750

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480

$1.150

$0.870

$0.750

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ComSIT USA

USA . 418,410 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 159,766 parts In-Stock

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Vyrian

USA . 60,210 parts In-Stock

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Chip Stock

USA . 6,517 parts In-Stock

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IBS Electronics

USA . 5,000 parts In-Stock

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$0.603

10k+ parts

$0.589

5,000

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$0.603

$0.589

Sensible Micro Corp

USA . 4,356 parts In-Stock

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4,356

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Bristol Electronics

USA . 4,336 parts In-Stock

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4,336

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Atlantic Semiconductor

USA . 3,782 parts In-Stock

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3,782

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ABC Electronics Ltd.

UK . 3,450 parts In-Stock

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3,450

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ACDS - Activité Composants Distribution Service

France . 2,990 parts In-Stock

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2,990

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NAC Semi

USA . 2,000 parts In-Stock

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$0.542

10k+ parts

$0.500

2,000

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$0.542

$0.500

North Shore Components

USA . 1,006 parts In-Stock

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1,006

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ComSIT Distribution GmbH

Germany . 770 parts In-Stock

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770

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Inventory MP

USA . 554 parts In-Stock

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554

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Cyclops Electronics Ltd

UK . 443 parts In-Stock

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443

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First Choice Components Inc.

USA . 404 parts In-Stock

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404

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PC Components Company LLC

USA . 289 parts In-Stock

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Sunrise Surplus Inc.

USA . 115 parts In-Stock

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EMSNET

USA . 59 parts In-Stock

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Prism Electronics

USA . 35 parts In-Stock

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QIE Inc.

USA . 15 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 82,425 parts In-Stock

1+ parts

$0.191

100+ parts

$0.186

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$0.185

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82,425

$0.191

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$0.185

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Aranea Global

USA . 50 parts In-Stock

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$0.334

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$0.320

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50

$0.334

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$0.320

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Aztec Data Supply Inc.

USA . 2,129 parts In-Stock

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$0.463

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2,129

$0.463

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Modulus Dynamics

Lithuania . 10,822 parts In-Stock

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$0.667

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$0.667

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$0.667

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10,822

$0.667

$0.667

$0.667

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Corohmni

South Africa . 31 parts In-Stock

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$0.766

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31

$0.766

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Kepictronics

USA . 91,290 parts In-Stock

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GreenTree Electronics

Israel . 19,000 parts In-Stock

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Eastek

USA . 16,000 parts In-Stock

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$0.313

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Perfect Parts

USA . 11,941 parts In-Stock

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Lixinc

USA . 7,563 parts In-Stock

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Glotronic Ltd.

UK . 7,200 parts In-Stock

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Continental Prestige Electronics

USA . 5,886 parts In-Stock

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5,886

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Cyclops Electronics Ltd (Excess)

UK . 3,319 parts In-Stock

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3,319

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,754 parts In-Stock

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1,754

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Enhance your electronic designs with the FZT600TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers high-quality Power Bipolar Junction Transistors that are ideal for switching applications. With its NPN Darlington configuration and small outline package style, this transistor offers reliable performance and efficient power dissipation. Whether you're working on consumer electronics, industrial equipment, or automotive systems, the FZT600TA provides the perfect solution to meet your design needs. Trust Diodes Incorporated for superior products that bring value, benefits, and advantages to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, making it versatile.

Configuration: DARLINGTON

Higher current gain and better sensitivity, suitable for high-power applications.

Transistor Application: SWITCHING

Optimized for fast switching speeds, ideal for applications requiring rapid ON/OFF transitions.

Surface Mount: YES

Saves space on PCB and allows for automated assembly processes.

Maximum Power Dissipation (Abs): 2 W

Can handle higher power levels without overheating, ensuring reliability.

Minimum DC Current Gain (hFE): 1000

Provides high current gain, amplifying weak signals effectively.

Maximum Operating Temperature: 150 °C

Can withstand elevated temperatures, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 140 V

Handles high voltage levels, making it suitable for power applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability.

Maximum Collector Current (IC): 2 A

Capable of handling higher currents, ideal for power switching applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance.

Nominal Transition Frequency (fT): 250 MHz

High frequency response enables faster signal processing and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT600TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT600TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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