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DZT5551Q-13

Diodes Incorporated

DZT5551Q-13 by Diodes Incorporated

DZT5551Q-13 by Diodes Inc. is a NPN BJT transistor with max. VCE of 160V, IC of 0.6A, and hFE of 30. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 130MHz. Features Gull Wing terminals in a small outline package shape for surface mount assembly.

Median Price

$0.451

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 530 parts In-Stock

1+ parts

$0.563

100+ parts

$0.310

1k+ parts

$0.207

10k+ parts

-

530

$0.563

$0.310

$0.207

-

Mouser Electronics

USA . 7,859 parts In-Stock

1+ parts

$0.970

100+ parts

$0.431

1k+ parts

$0.250

10k+ parts

$0.178

7,859

$0.970

$0.431

$0.250

$0.178

Verical

USA . 102,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.141

102,500

-

-

-

$0.141

Element14

Singapore . 2,160 parts In-Stock

1+ parts

-

100+ parts

$0.451

1k+ parts

$0.271

10k+ parts

$0.250

2,160

-

$0.451

$0.271

$0.250

Farnell

UK . 140 parts In-Stock

1+ parts

-

100+ parts

$0.307

1k+ parts

$0.202

10k+ parts

$0.163

140

-

$0.307

$0.202

$0.163

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 66 parts In-Stock

1+ parts

$0.203

100+ parts

-

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-

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-

66

$0.203

-

-

-

Maritex

Poland . 148 parts In-Stock

1+ parts

$0.213

100+ parts

$0.159

1k+ parts

$0.131

10k+ parts

$0.117

148

$0.213

$0.159

$0.131

$0.117

IBS Electronics

USA . 7,500 parts In-Stock

1+ parts

$0.775

100+ parts

$0.316

1k+ parts

$0.197

10k+ parts

-

7,500

$0.775

$0.316

$0.197

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Vyrian

USA . 17,156 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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17,156

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 17,238 parts In-Stock

1+ parts

$0.120

100+ parts

$0.117

1k+ parts

$0.116

10k+ parts

-

17,238

$0.120

$0.117

$0.116

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Argo Parts USA

USA . 2,618 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

$0.197

2,618

$0.203

-

-

$0.197

Ampacity Inc.

Singapore . 17,620 parts In-Stock

1+ parts

$0.261

100+ parts

-

1k+ parts

-

10k+ parts

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17,620

$0.261

-

-

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Corohmni

South Africa . 563 parts In-Stock

1+ parts

$0.586

100+ parts

-

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-

10k+ parts

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563

$0.586

-

-

-

Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$1.780

100+ parts

-

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100

$1.780

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-

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RC Electronics

USA . 72,311 parts In-Stock

1+ parts

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72,311

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-

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Lixinc

USA . 17,521 parts In-Stock

1+ parts

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100+ parts

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17,521

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-

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Kepictronics

USA . 7,220 parts In-Stock

1+ parts

-

100+ parts

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7,220

-

-

-

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Continental Prestige Electronics

USA . 675 parts In-Stock

1+ parts

-

100+ parts

$0.271

1k+ parts

$0.165

10k+ parts

$0.132

675

-

$0.271

$0.165

$0.132

Overview

Experience superior performance and reliability with the DZT5551Q-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-notch quality and innovation in their products. The DZT5551Q-13 falls under the category of Small Signal Bipolar Junction Transistors, ideal for switching applications. With its NPN polarity and compact rectangular package, this transistor offers exceptional value and benefits to customers. Trust Diodes Incorporated to deliver cutting-edge solutions that meet your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good thermal conductivity and electrical insulation, enhancing the overall reliability of the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient operation when used in electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Rectangular package shape is compact and efficient, enabling close placement on the PCB for enhanced circuit density.

No. of Terminals: 4

Four terminals provide versatile connectivity options, allowing for various circuit configurations and connection possibilities.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures reliable amplification and switching performance in a wide range of applications.

Maximum Collector-Emitter Voltage: 160 V

High maximum collector-emitter voltage rating of 160V makes this transistor suitable for use in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material provides excellent performance characteristics, such as high electron mobility and low leakage currents, for optimal transistor operation.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate power loads in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity, ensuring secure connections during PCB assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options, accommodating various design requirements.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and improves heat dissipation efficiency to enhance transistor reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures robust solder joint reliability during PCB assembly processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard guarantees high quality, reliability, and performance standards suitable for automotive applications.

Nominal Transition Frequency (fT): 130 MHz

High nominal transition frequency of 130MHz enables fast switching and amplification capabilities, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DZT5551Q-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DZT5551Q-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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