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DZT5401-13

Diodes Incorporated

DZT5401-13 by Diodes Incorporated

DZT5401-13 by Diodes Inc. is a PNP BJT transistor with 150V VCEO, 0.6A IC, and 1W power dissipation. Ideal for switching applications, it has a hFE of 50, operates up to 150°C, and features GULL WING terminals in a SMALL OUTLINE package.

Median Price

$0.221

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 88 parts In-Stock

1+ parts

$0.626

100+ parts

$0.282

1k+ parts

$0.166

10k+ parts

-

88

$0.626

$0.282

$0.166

-

DigiKey

USA . 9,500 parts In-Stock

1+ parts

$0.660

100+ parts

$0.262

1k+ parts

$0.178

10k+ parts

$0.135

9,500

$0.660

$0.262

$0.178

$0.135

Verical

USA . 22,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

22,500

-

-

-

$0.113

Future Electronics

Canada . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.094

2,500

-

-

-

$0.094

Arrow

USA . 94 parts In-Stock

1+ parts

-

100+ parts

$0.154

1k+ parts

-

10k+ parts

-

94

-

$0.154

-

-

Farnell

UK . 88 parts In-Stock

1+ parts

-

100+ parts

$0.221

1k+ parts

$0.151

10k+ parts

$0.115

88

-

$0.221

$0.151

$0.115

Element14

Singapore . 88 parts In-Stock

1+ parts

-

100+ parts

$0.378

1k+ parts

$0.226

10k+ parts

$0.196

88

-

$0.378

$0.226

$0.196

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rutronik

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.139

5,000

-

-

-

$0.139

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

5,000

-

-

-

$0.150

Bristol Electronics

USA . 160 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

-

10k+ parts

-

160

-

$0.300

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 621 parts In-Stock

1+ parts

$11.837

100+ parts

-

1k+ parts

-

10k+ parts

-

621

$11.837

-

-

-

Northwest PG Solutions

USA . 1,186 parts In-Stock

1+ parts

$13.020

100+ parts

$11.718

1k+ parts

-

10k+ parts

-

1,186

$13.020

$11.718

-

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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90,000

-

-

-

-

Perfect Parts

USA . 58,645 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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58,645

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,340 parts In-Stock

1+ parts

-

100+ parts

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17,340

-

-

-

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Kepictronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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9,000

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.140

10k+ parts

-

2,500

-

-

$0.140

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Continental Prestige Electronics

USA . 1,465 parts In-Stock

1+ parts

-

100+ parts

$0.205

1k+ parts

$0.128

10k+ parts

$0.098

1,465

-

$0.205

$0.128

$0.098

Overview

Enhance your electronic projects with the DZT5401-13 by Diodes Incorporated. Designed with precision and quality, this Small Signal Bipolar Junction Transistor offers excellent performance in switching applications. With a PNP polarity and single configuration, this transistor is reliable and efficient. Its compact design and surface mount capability make it ideal for a wide range of projects. Experience the value and benefits of this high-quality product, providing you with the advantage you need to succeed in your electronics endeavors. Elevate your projects with the DZT5401-13 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other PNP transistors and complementary NPN transistors in electronic circuits, enabling efficient switching operations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor excels in quickly turning on and off circuits, making it suitable for use in a wide range of electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand harsh environmental conditions and maintain stable performance in demanding applications.

Maximum Collector-Emitter Voltage: 150 V

The high maximum collector-emitter voltage rating of 150V allows this transistor to handle higher voltages without breakdown, ensuring safe and reliable operation in various circuit configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DZT5401-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DZT5401-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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