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DZT5551-13

Diodes Incorporated

DZT5551-13 by Diodes Incorporated

DZT5551-13 by Diodes Inc. is a NPN BJT transistor with 160V VCEO, 0.6A IC, and 100MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers high power dissipation of 1W in a plastic/epoxy body.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,619 parts In-Stock

1+ parts

$0.626

100+ parts

$0.282

1k+ parts

$0.166

10k+ parts

-

1,619

$0.626

$0.282

$0.166

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Mouser Electronics

USA . 9,809 parts In-Stock

1+ parts

$0.660

100+ parts

$0.263

1k+ parts

$0.199

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9,809

$0.660

$0.263

$0.199

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DigiKey

USA . 3,945 parts In-Stock

1+ parts

$0.660

100+ parts

$0.262

1k+ parts

$0.178

10k+ parts

$0.135

3,945

$0.660

$0.262

$0.178

$0.135

Verical

USA . 210,000 parts In-Stock

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$0.097

210,000

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$0.097

Arrow

USA . 47,500 parts In-Stock

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$0.092

47,500

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$0.092

Element14

Singapore . 13,300 parts In-Stock

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100+ parts

$0.257

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$0.163

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13,300

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$0.257

$0.163

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Avnet

USA . 2,500 parts In-Stock

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$0.098

2,500

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$0.098

Farnell

UK . 463 parts In-Stock

1+ parts

-

100+ parts

$0.231

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$0.172

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463

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$0.231

$0.172

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.196

100+ parts

-

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10

$0.196

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TME

Poland . 955 parts In-Stock

1+ parts

$0.610

100+ parts

$0.256

1k+ parts

$0.160

10k+ parts

$0.128

955

$0.610

$0.256

$0.160

$0.128

Vyrian

USA . 144,421 parts In-Stock

1+ parts

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IBS Electronics

USA . 102,500 parts In-Stock

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$0.119

102,500

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$0.119

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

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$0.160

10,000

-

-

-

$0.160

Rutronik

Germany . 7,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.136

7,500

-

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$0.136

Connect4Technologies Inc.

Canada . 1,270 parts In-Stock

1+ parts

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1,270

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ComSIT Distribution GmbH

Germany . 128 parts In-Stock

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128

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Bristol Electronics

USA . 98 parts In-Stock

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$0.300

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98

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$0.300

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Sunrise Surplus Inc.

USA . 32 parts In-Stock

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32

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Distributors (Availability)

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Semicontronic

India . 164,329 parts In-Stock

1+ parts

$0.078

100+ parts

$0.076

1k+ parts

$0.076

10k+ parts

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164,329

$0.078

$0.076

$0.076

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Ampacity Inc.

Singapore . 164,298 parts In-Stock

1+ parts

$0.078

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164,298

$0.078

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Modulus Dynamics

Lithuania . 9,624 parts In-Stock

1+ parts

$0.196

100+ parts

$0.196

1k+ parts

$0.196

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9,624

$0.196

$0.196

$0.196

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Corohmni

South Africa . 256 parts In-Stock

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$0.196

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256

$0.196

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.247

100+ parts

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$0.235

10k+ parts

$0.230

2,000

$0.247

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$0.235

$0.230

Argo Parts USA

USA . 1,144 parts In-Stock

1+ parts

$0.247

100+ parts

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$0.240

1,144

$0.247

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$0.240

Continental Prestige Electronics

USA . 13,920 parts In-Stock

1+ parts

$0.391

100+ parts

$0.217

1k+ parts

$0.132

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13,920

$0.391

$0.217

$0.132

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Aztec Data Supply Inc.

USA . 3,880 parts In-Stock

1+ parts

$1.030

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3,880

$1.030

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Andel Nordic

Denmark . 2,799 parts In-Stock

1+ parts

$6.029

100+ parts

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1k+ parts

$5.788

10k+ parts

$5.788

2,799

$6.029

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$5.788

$5.788

Perfect Parts

USA . 98,478 parts In-Stock

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98,478

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Kepictronics

USA . 27,860 parts In-Stock

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Robosynatics

Brazil . 19,159 parts In-Stock

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Lucentia Tech

USA . 19,159 parts In-Stock

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$0.192

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$0.188

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$0.188

19,159

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$0.192

$0.188

$0.188

Lixinc

USA . 18,634 parts In-Stock

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18,634

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Infinite Electronics LLP (Excess)

. 7,504 parts In-Stock

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7,504

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Cyclops Electronics Ltd (Excess)

UK . 2,934 parts In-Stock

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2,934

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ChipstoGo Electronic ltd

UK . 11 parts In-Stock

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Overview

Unleash the power of seamless switching with the DZT5551-13 by Diodes Incorporated. Crafted with precision and quality, this NPN small signal bipolar junction transistor offers unparalleled performance in a compact package. Ideal for a wide range of applications, from automation to telecommunications, this transistor provides reliability and efficiency like no other. Experience the value and benefits of superior technology with the DZT5551-13, delivering maximum power dissipation, high collector-emitter voltage, and excellent transition frequency. Choose Diodes Incorporated for cutting-edge solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Common and versatile type of transistor for various switching applications.

Configuration: SINGLE

Simplified setup and wiring for ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards.

Package Shape: RECTANGULAR

Space-saving design for compact electronic devices.

No. of Terminals: 4

Simplified connection setup for easier integration into circuits.

Maximum Power Dissipation (Abs): 1 W

Ability to handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package size for efficient use of space on circuit boards.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification of current signals.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 160 V

Can handle relatively high voltage levels, providing versatility in applications.

Transistor Element Material: SILICON

Highly reliable material for transistors, ensuring stable performance over time.

Maximum Collector Current (IC): 0.6 A

Adequate current handling capacity for many switching applications.

Terminal Finish: MATTE TIN

Provides good electrical conductivity and a durable finish for the terminals.

Terminal Position: DUAL

Two terminal positions for flexible connectivity options.

Case Connection: COLLECTOR

Clear connection point for the collector terminal, aiding in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand brief exposure to high temperatures during soldering.

Peak Reflow Temperature °C: 260

Suitable peak reflow temperature for soldering processes.

Nominal Transition Frequency (fT): 100 MHz

High frequency response for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DZT5551-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DZT5551-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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