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DXTN3C60PSQ-13

Diodes Incorporated

DXTN3C60PSQ-13 by Diodes Incorporated

DXTN3C60PSQ-13 by Diodes Inc. is a NPN BJT transistor for switching applications. It has VCEsat of 0.27V, hFE of 50, and IC of 3A. With a max operating temp of 175°C, it's ideal for automotive electronics due to AEC-Q101 compliance and high transition frequency of 140MHz.

Median Price

$0.642

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,866 parts In-Stock

1+ parts

$0.610

100+ parts

$0.319

1k+ parts

$0.229

10k+ parts

$0.179

6,866

$0.610

$0.319

$0.229

$0.179

Newark

USA . 2,181 parts In-Stock

1+ parts

$0.634

100+ parts

$0.332

1k+ parts

$0.238

10k+ parts

-

2,181

$0.634

$0.332

$0.238

-

Element14

Singapore . 3,814 parts In-Stock

1+ parts

$0.651

100+ parts

$0.421

1k+ parts

$0.285

10k+ parts

$0.274

3,814

$0.651

$0.421

$0.285

$0.274

Farnell

UK . 3,814 parts In-Stock

1+ parts

$0.737

100+ parts

$0.410

1k+ parts

$0.284

10k+ parts

$0.244

3,814

$0.737

$0.410

$0.284

$0.244

DigiKey

USA . 4,400 parts In-Stock

1+ parts

$0.910

100+ parts

$0.367

1k+ parts

$0.254

10k+ parts

$0.197

4,400

$0.910

$0.367

$0.254

$0.197

Verical

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.175

7,500

-

-

-

$0.175

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 527 parts In-Stock

1+ parts

$0.238

100+ parts

-

1k+ parts

-

10k+ parts

$0.228

527

$0.238

-

-

$0.228

Northwest PG Solutions

USA . 1,467 parts In-Stock

1+ parts

$0.262

100+ parts

-

1k+ parts

-

10k+ parts

$0.231

1,467

$0.262

-

-

$0.231

Continental Prestige Electronics

USA . 1,725 parts In-Stock

1+ parts

$0.603

100+ parts

$0.337

1k+ parts

$0.205

10k+ parts

$0.185

1,725

$0.603

$0.337

$0.205

$0.185

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Overview

Enhance your electronic circuits with the high-quality DXTN3C60PSQ-13 Power Bipolar Junction Transistor by Diodes Incorporated. This NPN transistor is perfect for switching applications, offering a low VCEsat of 0.27V and a maximum collector-emitter voltage of 60V. With a small outline package style and dual terminals, this transistor is versatile and easy to integrate into your designs. Trust in Diodes Incorporated's reputation for excellence in the industry and take advantage of the superior performance and reliability that the DXTN3C60PSQ-13 provides. Elevate your projects today with this top-of-the-line component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits and offer good performance for switching applications.

Configuration: SINGLE

Simplified design with a single transistor configuration for easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance for such tasks.

Maximum VCEsat: 0.27 V

Low saturation voltage ensures efficient operation with minimal power loss.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and enabling automated assembly.

Maximum Power Dissipation (Abs): 2.5 W

Can handle relatively high power levels, making it suitable for a range of applications.

Minimum DC Current Gain (hFE): 50

Good DC current gain ensures stable and predictable performance in circuits.

Maximum Collector-Emitter Voltage: 60 V

A high voltage rating provides flexibility in circuit design and operation.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency allows for fast switching speeds in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) DXTN3C60PSQ-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

17 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.27 V

Trade Compliance

DXTN3C60PSQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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