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DXTN03060CFG-7

Diodes Incorporated

DXTN03060CFG-7 by Diodes Incorporated

DXTN03060CFG-7 by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.26V, hFE of 75, and IC of 6A. With a max operating temp of 150°C, it's ideal for small outline packages in power management circuits.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,601 parts In-Stock

1+ parts

$0.638

100+ parts

$0.342

1k+ parts

$0.192

10k+ parts

$0.188

1,601

$0.638

$0.342

$0.192

$0.188

DigiKey

USA . 1,970 parts In-Stock

1+ parts

$0.660

100+ parts

$0.393

1k+ parts

$0.249

10k+ parts

-

1,970

$0.660

$0.393

$0.249

-

Element14

Singapore . 1,601 parts In-Stock

1+ parts

$0.699

100+ parts

$0.416

1k+ parts

$0.233

10k+ parts

-

1,601

$0.699

$0.416

$0.233

-

Mouser Electronics

USA . 1,899 parts In-Stock

1+ parts

$0.720

100+ parts

$0.336

1k+ parts

$0.242

10k+ parts

$0.187

1,899

$0.720

$0.336

$0.242

$0.187

Newark

USA . 1,481 parts In-Stock

1+ parts

$1.030

100+ parts

$0.498

1k+ parts

$0.377

10k+ parts

-

1,481

$1.030

$0.498

$0.377

-

Avnet

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.187

2,000

-

-

-

$0.187

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 905 parts In-Stock

1+ parts

$0.638

100+ parts

-

1k+ parts

-

10k+ parts

-

905

$0.638

-

-

-

Northwest PG Solutions

USA . 2,377 parts In-Stock

1+ parts

$0.702

100+ parts

-

1k+ parts

-

10k+ parts

-

2,377

$0.702

-

-

-

Continental Prestige Electronics

USA . 1,778 parts In-Stock

1+ parts

-

100+ parts

$0.286

1k+ parts

$0.158

10k+ parts

$0.149

1,778

-

$0.286

$0.158

$0.149

Overview

Looking for a reliable solution for your power switching needs? Look no further than the DXTN03060CFG-7 by Diodes Incorporated. Manufactured with top-quality materials and cutting-edge technology, this NPN Power BJT offers exceptional performance and efficiency. Ideal for a variety of applications, from industrial to consumer electronics, this transistor provides a seamless and reliable switching experience. Trust Diodes Incorporated to deliver value, quality, and innovation with every product, making your projects easier and more efficient than ever before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for industrial and commercial applications.

Polarity or Channel Type: NPN

Common type of BJT, widely used for various switching applications.

Configuration: SINGLE

Simplified design for ease of use and integration into circuits.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance.

Surface Mount: YES

Suitable for modern PCB assembly processes, saving space and simplifying installation.

Maximum VCEsat: 0.26 V

Low voltage drop, minimizing power loss and improving efficiency.

Package Shape: SQUARE

Space-efficient design for compact circuit layouts.

Terminal Form: FLAT

Easy and secure connection to PCBs for stable performance.

No. of Terminals: 8

Sufficient terminals for versatile connectivity options.

Maximum Power Dissipation (Abs): 2.7 W

Can handle high power loads without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Minimum DC Current Gain (hFE): 75

Consistent and predictable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperature environments, suitable for various applications.

Maximum Collector-Base Capacitance: 290 pF

Low capacitance for minimal signal distortion and improved high-frequency performance.

Maximum Collector-Emitter Voltage: 60 V

Safe operating voltage level, protecting the transistor from damage.

Transistor Element Material: SILICON

High-quality material for reliable and durable performance.

Minimum Operating Temperature: -55 °C

Can withstand cold temperatures, suitable for outdoor or refrigerated applications.

Maximum Collector Current (IC): 6 A

High current handling capacity for heavy-duty applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term durability.

Terminal Position: DUAL

Flexibility in mounting orientation for ease of installation.

Case Connection: COLLECTOR

Clearly defined case connection for proper circuit integration.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without damage.

Reference Standard: MIL-STD-202

Compliance with industry standards for quality and reliability.

Nominal Transition Frequency (fT): 140 MHz

High-frequency capability for fast and efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) DXTN03060CFG-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Base Capacitance:

290 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

S-PDSO-F8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.26 V

Trade Compliance

DXTN03060CFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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