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DXTN3C60PS-13

Diodes Incorporated

DXTN3C60PS-13 by Diodes Incorporated

DXTN3C60PS-13 by Diodes Inc. is a NPN BJT transistor with 60V VCE, 3A IC, and 140MHz fT. Ideal for switching applications, it comes in a small outline package with matte tin finish and flat terminals. Suitable for surface mount designs requiring high DC current gain and fast transition frequency.

Median Price

$1.020

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,046 parts In-Stock

1+ parts

$1.020

100+ parts

$0.474

1k+ parts

$0.347

10k+ parts

$0.288

2,046

$1.020

$0.474

$0.347

$0.288

Mouser Electronics

USA . 2,400 parts In-Stock

1+ parts

$1.280

100+ parts

$0.534

1k+ parts

$0.379

10k+ parts

$0.288

2,400

$1.280

$0.534

$0.379

$0.288

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.288

15,000

-

-

-

$0.288

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 525 parts In-Stock

1+ parts

$0.238

100+ parts

-

1k+ parts

-

10k+ parts

$0.228

525

$0.238

-

-

$0.228

Northwest PG Solutions

USA . 1,424 parts In-Stock

1+ parts

$0.262

100+ parts

-

1k+ parts

-

10k+ parts

$0.231

1,424

$0.262

-

-

$0.231

Overview

Enhance your electronic projects with the DXTN3C60PS-13 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. This Power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 3A. Whether you're a hobbyist or a professional, this NPN transistor in a small outline package is designed to deliver exceptional performance. Upgrade your circuits today with the DXTN3C60PS-13 and experience the superior value and benefits it provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and can handle higher current flows, making them suitable for a wide range of electronic projects.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate the transistor into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off, making it ideal for controlling the flow of electricity in circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation of the transistor on printed circuit boards, saving space and improving overall performance.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it straightforward to place and solder the transistor onto a circuit board, ensuring a secure and stable connection.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 indicates that the transistor can amplify current effectively, providing consistent performance in various applications.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage of 60V, this transistor can handle higher voltage levels, making it suitable for a wide range of voltage requirements.

Transistor Element Material: SILICON

Silicon is a common material used in transistors due to its excellent electrical properties, ensuring high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 3 A

The maximum collector current of 3A indicates that the transistor can handle high currents, making it ideal for power applications and devices requiring large current flows.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides a reliable and secure connection, ensuring stable performance and minimizing the risk of connectivity issues.

Terminal Position: DUAL

The dual terminal position allows for versatile installation options, making it easier to connect the transistor in various circuit configurations and setups.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the circuit design and provides a convenient point for connecting external components in the circuit.

Nominal Transition Frequency (fT): 140 MHz

A high nominal transition frequency of 140 MHz indicates that the transistor can switch on and off quickly, making it suitable for high-frequency applications and fast switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) DXTN3C60PS-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DXTN3C60PS-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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