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DXTN3C100PSQ-13

Diodes Incorporated

DXTN3C100PSQ-13 by Diodes Incorporated

DXTN3C100PSQ-13 by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.33V, hFE of 10, and IC of 3A. Ideal for power management in automotive electronics due to AEC-Q101 compliance and 100V VCEO max rating.

Median Price

$0.868

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,226 parts In-Stock

1+ parts

$0.568

100+ parts

$0.316

1k+ parts

$0.216

10k+ parts

$0.182

2,226

$0.568

$0.316

$0.216

$0.182

Newark

USA . 2,487 parts In-Stock

1+ parts

$0.848

100+ parts

$0.468

1k+ parts

$0.313

10k+ parts

-

2,487

$0.848

$0.468

$0.313

-

Element14

Singapore . 2,226 parts In-Stock

1+ parts

$0.887

100+ parts

$0.566

1k+ parts

$0.381

10k+ parts

$0.363

2,226

$0.887

$0.566

$0.381

$0.363

Mouser Electronics

USA . 6,257 parts In-Stock

1+ parts

$0.910

100+ parts

$0.367

1k+ parts

$0.255

10k+ parts

$0.200

6,257

$0.910

$0.367

$0.255

$0.200

DigiKey

USA . 2,321 parts In-Stock

1+ parts

$0.910

100+ parts

$0.367

1k+ parts

$0.254

10k+ parts

$0.197

2,321

$0.910

$0.367

$0.254

$0.197

Verical

USA . 92,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.175

92,500

-

-

-

$0.175

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.231

10,000

-

-

-

$0.231

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 15,049 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

-

10k+ parts

-

15,049

$0.149

-

-

-

Corohmni

South Africa . 171 parts In-Stock

1+ parts

$1.304

100+ parts

-

1k+ parts

-

10k+ parts

-

171

$1.304

-

-

-

Argo Parts USA

USA . 2,859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,859

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.290

10k+ parts

-

2,500

-

-

$0.290

-

Continental Prestige Electronics

USA . 2,451 parts In-Stock

1+ parts

-

100+ parts

$0.337

1k+ parts

$0.205

10k+ parts

$0.182

2,451

-

$0.337

$0.205

$0.182

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Enhance your electronic designs with the DXTN3C100PSQ-13 by Diodes Incorporated. Known for their high-quality products, Diodes Incorporated delivers reliable Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum VCEsat of 0.33V and a maximum collector-emitter voltage of 100V, this NPN transistor offers superior performance and efficiency. From its small outline package to its dual terminal position, this transistor is designed for ease of use and installation. Trust Diodes Incorporated to provide you with the best components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used for general purpose amplification and switching applications.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: SWITCHING

Ideal for applications requiring quick switching operations.

Surface Mount: YES

Enables easy and secure mounting onto circuit boards.

Maximum VCEsat: 0.33 V

Low voltage drop across collector-emitter junction, minimizing power loss.

Package Shape: RECTANGULAR

Efficient use of space in the circuit design.

Terminal Form: FLAT

Facilitates secure connection with other components.

No. of Terminals: 5

Provides necessary connections for desired functionality.

Maximum Power Dissipation (Abs): 2.5 W

Capable of handling higher power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Minimum DC Current Gain (hFE): 10

Ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 175 °C

Can operate effectively within a wide temperature range.

Maximum Collector-Emitter Voltage: 100 V

Provides a high voltage rating for versatile applications.

Transistor Element Material: SILICON

Offers high performance and reliability for various applications.

Minimum Operating Temperature: -55 °C

Suitable for use in harsh environments with low temperatures.

Maximum Collector Current (IC): 3 A

Capable of handling higher current loads in the circuit.

Terminal Finish: MATTE TIN

Provides reliable terminal connections for enhanced conductivity.

Terminal Position: DUAL

Allows flexibility in circuit layout and connections.

Case Connection: COLLECTOR

Simplified connection scheme for efficient performance.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Reference Standard: AEC-Q101

Compliance with automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT): 140 MHz

High frequency capability for rapid signal switching and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) DXTN3C100PSQ-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.33 V

Trade Compliance

DXTN3C100PSQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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