Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
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Power Field Effect Transistors (FET) DMP65H11D0HSS-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
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Transistor Application:
Transistor Element Material:
DMP65H11D0HSS-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OHN3020U
Tt Electronics Plc
OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MURS160T3G
Onsemi
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
BSS138BKW,115
NXP Semiconductors
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
M39029/56351
Souriau
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM317T
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Minimum Input-Output Voltage Differential: 3 V;
BAV99
Itt Semiconductor
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS
Rugao Dachang Electronic
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
BSS123
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS8984-F085
FDS8984-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a RECTANGULAR package with GULL WING terminals. With a Max Pulsed Drain Current of 30A and 0.023 ohm Drain-Source On Resistance, it operates in ENHANCEMENT MODE at up to 150°C.
IRLML6401GTRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 12 V;
CSD18563Q5AT
Texas Instruments
CSD18563Q5AT by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A IDM and 146mJ EAS, operating in the -55 to 150 °C temperature range. This SINGLE transistor has a 0.0108 ohm Drain-Source Resistance and comes in a SMALL OUTLINE package style.
IRFR3410TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
IRFR540ZTRPBF
Infineon Technologies
IRFR540ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 140A and EAS of 39mJ, operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals offers 0.0285 ohm RDS(ON) and 91W Pd max.
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD6637
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
PSMN040-100MSEX
PSMN040-100MSEX by NXP Semiconductors is a single-channel N-CHANNEL power FET with a max drain current of 30A and max power dissipation of 91W. It operates in enhancement mode and is suitable for applications requiring high power and temperature resistance.
CPH6354-TL-W
Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
IRF540NLPBF
Infineon's IRF540NLPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 185mJ EAS, and 0.044 ohm RDS(on). With a max power dissipation of 130W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
FDS3672_NL
FDS3672_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 7.5A Drain Current, 0.023 ohm On Resistance, and 150°C Operating Temperature. Package: PLASTIC/EPOXY, GULL WING terminals in RECTANGULAR shape.
IRF540SPBF
Vishay Intertechnology
Vishay Intertechnology's IRF540SPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 230mJ EAS, and 0.077 ohm RDS(on). With a max power dissipation of 150W and operating temperature up to 175°C, it is suitable for high-power circuits requiring efficient switching capabilities.
DMP3099L-7
Diodes Incorporated
DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.
IRLR3110ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
IRFB4110PBF
IRFB4110PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 670A and EAS of 190mJ, with a Drain Current (ID) of 180A. Operating in ENHANCEMENT MODE, it has a max power dissipation of 370W at 175°C.
IRFR6215TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Case Connection: DRAIN;
IRFHS9301TRPBF
Infineon's IRFHS9301TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.037 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with DUAL terminals.
IRF740PBF
Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
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DMP6023LE-13
DMP6023LE-13 by Diodes Inc. is a P-channel FET with 60V DS breakdown voltage and 50A IDM for switching applications. It operates in enhancement mode, has a max temp of 150°C, and features a drain-source resistance of 0.028 ohm. Ideal for automotive use due to AEC-Q101 standard compliance.
DMP6110SVT-7
DMP6110SVT-7 by Diodes Inc. is a P-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 24A IDM, 18mJ EAS, and 0.105 ohm RDS(on). With a small outline package and -55 to 150°C operating range, it's suitable for various power management tasks.
DMP6023LEQ-13
DMP6023LEQ-13 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 62.9mJ, operating in ENHANCEMENT MODE with -55 to 150°C temperature range.
DMP6050SFG-13
DMP6050SFG-13 by Diodes Incorporated is a P-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 32A and a max drain-source on resistance of 0.05 ohm. This transistor is commonly used for switching applications in various electronic devices.
DMP6250SE-13
DMP6250SE-13 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 60V and max pulsed drain current of 11A. It is used for switching applications, has a small outline package style, and operates in enhancement mode.
DMP6050SFG-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; Package Shape: SQUARE; Terminal Position: DUAL;
DMP6110SVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JESD-609 Code: e3; Terminal Form: GULL WING;
DMP6110SSS-13
DMP6110SSS-13 by Diodes Inc. is a P-channel FET with 60V DS breakdown voltage, 19A IDM, and 0.11 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and EAS of 15.4 mJ for robust performance in harsh environments. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
DMP6050SPS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
DMP6023LSS-13
DMP6023LSS-13 by Diodes Inc. is a P-channel FET with 60V DS breakdown voltage, 50A IDM, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.
DMP65H13D0HSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
DMP6080SSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 19 A; Operating Mode: ENHANCEMENT MODE; Additional Features: HIGH RELIABILITY;
DMP68D0LFB-7B
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.21 W; Maximum Pulsed Drain Current (IDM): .8 A; Transistor Application: SWITCHING;
DMP65H9D0HSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; No. of Elements: 1; Maximum Drain Current (ID): .3 A;
DMP6018LPSQ-13
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMP68D1LFB-7B
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Terminal Position: BOTTOM; Package Style (Meter): CHIP CARRIER;
DMP6110SSSQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 15.4 mJ; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 19 A;
DMP6018LPS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 60 A;
DMP6250SEQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Minimum Operating Temperature: -55 Cel; Peak Reflow Temperature (C): 260;
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