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DMN2005UPS-13

Diodes Incorporated

DMN2005UPS-13 by Diodes Incorporated

DMN2005UPS-13 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 150A pulsed drain current, ideal for switching applications. It operates in enhancement mode with 0.0087 ohm max drain-source resistance, offering high power dissipation of 2.5W in a small outline package style.

Median Price

$0.781

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,488 parts In-Stock

1+ parts

$0.370

100+ parts

$0.316

1k+ parts

$0.263

10k+ parts

$0.238

2,488

$0.370

$0.316

$0.263

$0.238

Mouser Electronics

USA . 2,414 parts In-Stock

1+ parts

$0.810

100+ parts

$0.493

1k+ parts

$0.358

10k+ parts

$0.315

2,414

$0.810

$0.493

$0.358

$0.315

Newark

USA . 2,490 parts In-Stock

1+ parts

$0.820

100+ parts

$0.493

1k+ parts

$0.368

10k+ parts

-

2,490

$0.820

$0.493

$0.368

-

DigiKey

USA . 2,272 parts In-Stock

1+ parts

$0.830

100+ parts

$0.503

1k+ parts

$0.379

10k+ parts

$0.316

2,272

$0.830

$0.503

$0.379

$0.316

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.315

5,000

-

-

-

$0.315

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Farnell

UK . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.428

1k+ parts

$0.269

10k+ parts

$0.261

2,500

-

$0.428

$0.269

$0.261

Element14

Singapore . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.781

1k+ parts

$0.497

10k+ parts

-

2,500

-

$0.781

$0.497

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.314

10,000

-

-

-

$0.314

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 65 parts In-Stock

1+ parts

$0.629

100+ parts

-

1k+ parts

-

10k+ parts

-

65

$0.629

-

-

-

Component Stockers USA

USA . 2,793 parts In-Stock

1+ parts

$0.830

100+ parts

$0.530

1k+ parts

$0.360

10k+ parts

-

2,793

$0.830

$0.530

$0.360

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.516

100+ parts

$1.380

1k+ parts

$1.243

10k+ parts

-

150

$1.516

$1.380

$1.243

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QUARKTWIN TECHNOLOGY LTD

USA . 24,913 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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24,913

-

-

-

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Northwest PG Solutions

USA . 895 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.818

10k+ parts

-

895

-

-

$3.818

-

Native Components

USA . 628 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.779

10k+ parts

-

628

-

-

$3.779

-

Metaverse IC Inc.

Canada . 129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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129

-

-

-

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Overview

Enhance your power management systems with the DMN2005UPS-13 by Diodes Incorporated. As a leader in the industry, Diodes Incorporated delivers top-notch Power Field Effect Transistors known for their reliability and efficiency. This N-CHANNEL transistor, featuring a built-in diode, is ideal for switching applications. With a maximum pulsed drain current of 150 A and a low on-resistance, this transistor offers exceptional performance and durability. Upgrade your designs with the DMN2005UPS-13 and experience enhanced power control like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring longevity and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capabilities for various electronic applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode, saving space and reducing component count.

Transistor Application: SWITCHING

Ideal for applications requiring fast switching speeds and high efficiency.

Surface Mount: YES

Enables easy and convenient mounting on PCBs, saving assembly time and cost.

Minimum DS Breakdown Voltage: 20 V

Provides a safe operating voltage range, protecting the transistor from voltage spikes.

Package Shape: RECTANGULAR

Facilitates efficient PCB layout and placement in compact spaces.

Terminal Form: FLAT

Allows for easy soldering and secure connection to the PCB.

Operating Mode: ENHANCEMENT MODE

Enables precise control over the transistor's conductivity, enhancing overall performance.

Maximum Pulsed Drain Current (IDM): 150 A

Suitable for high-power applications requiring short bursts of current.

Avalanche Energy Rating (EAS): 133 mJ

Withstands high energy spikes, increasing the reliability and ruggedness of the transistor.

No. of Terminals: 8

Provides multiple connection points for flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 2.5 W

Maintains stable operation by dissipating heat effectively, preventing overheating.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for denser circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and efficiency in switching applications.

Maximum Operating Temperature: 150 °C

Allows for operation in a wide temperature range, suitable for various environments.

Transistor Element Material: SILICON

Provides reliability and consistent performance over an extended period.

Minimum Operating Temperature: -55 °C

Ensures reliable operation even in low-temperature environments.

Terminal Finish: MATTE TIN

Facilitates soldering and enhances the durability of the terminal connections.

Maximum Drain Current (ID): 20 A

Suitable for medium to high power applications requiring continuous current.

Maximum Drain-Source On Resistance: 0.0087 ohm

Provides low resistance for efficient power transfer and minimal power loss.

Terminal Position: DUAL

Allows for versatile placement and connection options in a circuit.

Case Connection: DRAIN

Simplifies the circuit design by providing a common connection point for the drain terminal.

Peak Reflow Temperature °C: 260

Ensures the solder joints are properly reflowed during the assembly process.

Maximum Feedback Capacitance (Crss): 505 pF

Helps to minimize feedback and improve stability in high-frequency applications.

Reference Standard: MIL-STD-202

Complies with industry standards, ensuring quality and reliability in performance.

Technical Specifications

Power Field Effect Transistors (FET) DMN2005UPS-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

133 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.0087 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

505 pF

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

150 A

Reference Standard:

MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN2005UPS-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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