Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
DMN22M5UFG-7 by Diodes Inc. is a N-channel power FET with a min DS breakdown voltage of 20V and max drain current of 27A. It is used for switching applications, has a small outline package style, and operates in enhancement mode.
Median Price
$0.784
Lifecycle Status
Suppliers In-Stock
9
In-Stock Inventory
1k+
Mouser Electronics
1+ parts
$1.260
100+ parts
$0.520
1k+ parts
$0.368
10k+ parts
$0.286
DigiKey
$0.276
Verical
-
$0.309
Avnet
Future Electronics
$0.240
Nova Conductors
$0.371
Vyrian
NAC Semi
IBS Electronics
$0.610
Ampacity Inc.
$0.204
Continental Prestige Electronics
$0.363
Argo Parts USA
$0.360
Netroflash
$0.352
$0.345
Aztec Data Supply Inc.
$1.010
Corohmni
$1.957
The use of plastic/epoxy material enhances the durability and allows for better insulation, making this FET suitable for various applications.
The N-channel configuration results in lower power consumption and higher efficiency, making this FET an excellent choice for power-switching applications.
Featuring a built-in diode, this FET simplifies circuit design, reduces component count, and enhances overall performance.
Designed specifically for switching applications, this FET ensures fast response times and reliable switching performance.
With its surface mount capability, this FET enables easy and convenient PCB assembly, saving time and effort during the manufacturing process.
The minimum breakdown voltage of 20 V allows for safe operation within a specific voltage range, offering protection against voltage spikes and ensuring device longevity.
The square package shape provides better stability and ease of mounting, contributing to enhanced mechanical strength and reliability.
The no-lead terminal form eliminates the risk of lead-related issues, such as solder fatigue, imparting increased reliability to the product.
Operating in enhancement mode allows for higher control over the FET's conductive state, resulting in better precision and accuracy in power management.
This FET consists of a single element, simplifying circuit design and reducing complexity, making it suitable for various applications.
With a maximum pulsed drain current of 500 A, this FET can handle high current demands, making it ideal for demanding power-switching applications.
The high avalanche energy rating of 175 mJ makes this FET resistant to voltage spikes and surge currents, ensuring reliable operation even under harsh conditions.
With 5 terminals, this FET offers versatile connection options, allowing for easy incorporation into different circuit layouts and configurations.
The high maximum power dissipation of 2.2 W ensures efficient heat dissipation, making this FET suitable for high-power applications without risking overheating.
The small outline package style makes this FET compact and space-saving, enabling its utilization in space-constrained environments while maintaining performance.
Utilizing metal-oxide semiconductor technology, this FET offers low leakage current and high switching speed, making it an optimal choice for power management applications.
The high maximum operating temperature of 150 °C allows this FET to withstand elevated temperatures, ensuring stable performance even in demanding environments.
Made of silicon, this FET provides excellent electrical properties, reliability, and compatibility with various semiconductor production processes.
The low minimum operating temperature of -55 °C allows this FET to operate reliably in extreme cold conditions, expanding its range of applications.
The matte tin terminal finish offers improved solderability and resistance against corrosion, ensuring secure and long-lasting connections.
With a high maximum drain current of 27 A, this FET can handle significant current loads, making it suitable for high-power applications.
The low maximum drain-source on resistance of 0.0025 ohm allows for minimal voltage drop and power losses, contributing to the efficiency and performance of the FET.
The dual terminal position enables flexibility in circuit layout and connection options, allowing for convenient integration into various system designs.
The drain case connection facilitates efficient heat dissipation, maintaining the FET's temperature within safe limits during operation.
With a peak reflow temperature of 260 °C, this FET can withstand the high temperature required during the solder reflow process, ensuring reliable and secure solder joints.
The maximum feedback capacitance of 538 pF enables stable and controlled operation of the FET, reducing the risk of oscillations and ensuring precise output characteristics.
Power Field Effect Transistors (FET) DMN22M5UFG-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
DMN22M5UFG-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Changes 11/May/2023
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
LM317LMX/NOPB
Texas Instruments
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRGCQ0805F10K
TE Connectivity
TE Connectivity's CRGCQ0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance.
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
BSS138
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
1N4148
Baneasa S A
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LAN8720AI-CP-TR
Microchip Technology
LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.
BAV99
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ISO1050DUBR
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
LM317D2TG
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
MBR0520LT1
Motorola
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
Central Semiconductor
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
OHN3020U
Tt Electronics Plc
OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.
Grande Electronics
MSC035SMA170B
Power Field-Effect Transistors;
BSC100N06LS3GATMA1
Infineon Technologies
Infineon's BSC100N06LS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a 0.01 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
ZXMP6A17E6TA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;
FQT4N20LTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-G4; Moisture Sensitivity Level (MSL): 1;
NVF2955T1G
The Onsemi NVF2955T1G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 17A and EAS of 225mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 0.185 ohm RDS(on), it offers efficient power dissipation up to 2.3W at 175°C.
AUIRFR5305TR
AUIRFR5305TR by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 175°C.
IRF7416TRPBF-1
Infineon's IRF7416TRPBF-1 is a P-CHANNEL FET with 10A max drain current and 2.5W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems operating up to 150°C.
IRLML2502
International Rectifier
IRLML2502 by International Rectifier is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.3W. This MOSFET is surface mountable with GULL WING terminals and can handle up to 33A pulsed drain current.
IRF7328TRPBF
Infineon's IRF7328TRPBF is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 32A IDM, and 0.021 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic systems requiring efficient power management in compact designs.
MRF151G
TE Connectivity's MRF151G is a N-CHANNEL FET with 40A ID and 500W power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temp of 150°C.
RFD14N05LSM9A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 14 A;
ZXMP10A18GTA
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
FQB34P10TM
FQB34P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 134A, EAS of 2200mJ, and ID of 33.5A. With a 0.06 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power electronics.
JANTX2N6796
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;
IRFH5010TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 100 V;
2N7000
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
FQP3P50
FQP3P50 by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 10.8A and EAS of 250mJ, making it suitable for high-power operations. With an operating temperature up to 150°C, this MOSFET offers reliable performance in various industrial settings.
IRFP460
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 20 A; No. of Terminals: 3;
SIRA01DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
STW4N150
STMicroelectronics
STW4N150 by STMicroelectronics is a N-CHANNEL FET with 1500V DS breakdown voltage, ideal for SWITCHING applications. It features 12A max pulsed drain current and 350mJ avalanche energy rating. The transistor operates in ENHANCEMENT MODE with 160W max power dissipation, making it suitable for high-power switching circuits.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
DMN2009LSS-13
DMN2009LSS-13 by Diodes Inc. is a power FET with N-channel polarity and a built-in diode. It is used for switching applications, has a min DS breakdown voltage of 20V, and can handle a max pulsed drain current of 42A.
DMN2005UFGQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.27 W; Maximum Drain-Source On Resistance: .0087 ohm; No. of Terminals: 8;
DMN2028UVT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
DMN2991UFB4-7B
Power Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
DMN2011UFX-7
Power Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; Peak Reflow Temperature (C): 260; JESD-609 Code: e4;
DMN2058U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; No. of Elements: 1; Peak Reflow Temperature (C): 260;
DMN2050L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .029 ohm;
DMN2005UFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.27 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 18 A;
DMN2024UTS-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.39 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 6.2 A;
DMN2009USS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
DMN2024UVT-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
DMN2024UQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 6.8 A;
DMN2009UCA4-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 4;
DMN2024UVT-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .024 ohm; Transistor Application: SWITCHING;
DMN2005UFGQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.27 W; Additional Features: HIGH RELIABILITY; Terminal Finish: MATTE TIN;
DMN2024UVTQ-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Terminals: 6; Maximum Operating Temperature: 150 Cel;
DMN2016UFX-7
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: NICKEL PALLADIUM GOLD;
DMN2022UNS-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel;
DMN2005UPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Avalanche Energy Rating (EAS): 133 mJ;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved