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DMG1016VQ-7

Diodes Incorporated

DMG1016VQ-7 by Diodes Incorporated

DMG1016VQ-7 by Diodes Inc. is a small signal FET with N/P-channel types, suitable for switching applications. It features 2 elements with built-in diode in a rectangular package, operating in enhancement mode. With max drain current of 0.87A and on-resistance of 0.4 ohm, it offers reliable performance in various electronic circuits at temperatures ranging from -55 to 150°C.

Median Price

$0.373

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,995 parts In-Stock

1+ parts

$0.610

100+ parts

$0.291

1k+ parts

$0.196

10k+ parts

$0.136

2,995

$0.610

$0.291

$0.196

$0.136

DigiKey

USA . 8,065 parts In-Stock

1+ parts

$0.620

100+ parts

$0.295

1k+ parts

$0.202

10k+ parts

$0.137

8,065

$0.620

$0.295

$0.202

$0.137

Verical

USA . 114,000 parts In-Stock

1+ parts

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$0.131

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$0.131

Avnet

USA . 24,000 parts In-Stock

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24,000

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Arrow

USA . 6,000 parts In-Stock

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$0.136

6,000

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$0.136

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 114,000 parts In-Stock

1+ parts

-

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$0.153

114,000

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$0.153

Diverse Electronics

Canada . 9,000 parts In-Stock

1+ parts

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9,000

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PC Components Company LLC

USA . 155 parts In-Stock

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155

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Bristol Electronics

USA . 155 parts In-Stock

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155

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 654 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

$0.166

654

$0.173

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$0.166

Northwest PG Solutions

USA . 1,946 parts In-Stock

1+ parts

$0.191

100+ parts

-

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$0.168

1,946

$0.191

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$0.168

Component Stockers USA

USA . 26,964 parts In-Stock

1+ parts

$0.440

100+ parts

$0.270

1k+ parts

$0.170

10k+ parts

$0.130

26,964

$0.440

$0.270

$0.170

$0.130

Kepictronics

USA . 215,800 parts In-Stock

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215,800

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Glotronic Ltd.

UK . 175,500 parts In-Stock

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175,500

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the cutting-edge performance of the DMG1016VQ-7 from Diodes Incorporated, a leading manufacturer known for top-quality small signal field effect transistors. Ideal for switching applications, this N-channel and P-channel transistor offers enhanced efficiency and reliability. With its compact design and high power dissipation capability, this product ensures seamless operation even in challenging conditions. Trust Diodes Incorporated to deliver exceptional value and performance with the DMG1016VQ-7, designed to meet the highest industry standards and specifications. Elevate your electronic projects with this advanced technology solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Versatile with both N-channel and P-channel options, allowing for a wider range of circuit designs and applications.

Minimum DS Breakdown Voltage: 20 V

Supports higher voltage applications, providing a safety margin for the transistor.

Maximum Drain Current (ID): 0.87 A

Capable of handling relatively high currents, suitable for various switching applications.

Maximum Drain-Source On Resistance: 0.4 ohm

Low on-state resistance results in efficient switching and minimal power dissipation.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without overheating, ensuring reliable performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG1016VQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.87 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5.37 pF

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG1016VQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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