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DMG1029SVQ-7

Diodes Incorporated

DMG1029SVQ-7 by Diodes Incorporated

DMG1029SVQ-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements in separate configuration for switching applications. Features include 60V DS breakdown voltage, 1.7Ω max drain-source resistance, and 0.5A max drain current. Ideal for compact designs requiring high-performance field-effect transistors in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.139

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5 parts In-Stock

1+ parts

$0.390

100+ parts

$0.152

1k+ parts

$0.101

10k+ parts

$0.065

5

$0.390

$0.152

$0.101

$0.065

Arrow

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.099

12,000

-

-

-

$0.099

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.099

12,000

-

-

-

$0.099

Element14

Singapore . 2,760 parts In-Stock

1+ parts

-

100+ parts

$0.226

1k+ parts

$0.164

10k+ parts

$0.152

2,760

-

$0.226

$0.164

$0.152

Farnell

UK . 190 parts In-Stock

1+ parts

-

100+ parts

$0.139

1k+ parts

$0.099

10k+ parts

$0.093

190

-

$0.139

$0.099

$0.093

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.163

100+ parts

-

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450

$0.163

-

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IBS Electronics

USA . 297,000 parts In-Stock

1+ parts

-

100+ parts

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$0.138

297,000

-

-

-

$0.138

NAC Semi

USA . 237,000 parts In-Stock

1+ parts

-

100+ parts

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$0.180

237,000

-

-

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$0.180

Chip Stock

USA . 192,500 parts In-Stock

1+ parts

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192,500

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Vyrian

USA . 35,674 parts In-Stock

1+ parts

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35,674

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Bristol Electronics

USA . 215 parts In-Stock

1+ parts

-

100+ parts

$0.281

1k+ parts

$0.169

10k+ parts

-

215

-

$0.281

$0.169

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 40,583 parts In-Stock

1+ parts

$0.082

100+ parts

$0.080

1k+ parts

$0.080

10k+ parts

-

40,583

$0.082

$0.080

$0.080

-

Ampacity Inc.

Singapore . 35,696 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

10k+ parts

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35,696

$0.082

-

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Argo Parts USA

USA . 2,931 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

-

10k+ parts

$0.158

2,931

$0.163

-

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$0.158

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

$0.155

10k+ parts

$0.152

1,000

$0.163

-

$0.155

$0.152

Continental Prestige Electronics

USA . 307 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

307

$0.163

-

-

$0.160

Corohmni

South Africa . 392 parts In-Stock

1+ parts

$0.611

100+ parts

-

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392

$0.611

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Aztec Data Supply Inc.

USA . 2,345 parts In-Stock

1+ parts

$1.530

100+ parts

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2,345

$1.530

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.838

100+ parts

$1.746

1k+ parts

$1.746

10k+ parts

-

450

$1.838

$1.746

$1.746

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Glotronic Ltd.

UK . 129,600 parts In-Stock

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129,600

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RC Electronics

USA . 79,814 parts In-Stock

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79,814

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Metaverse IC Inc.

Canada . 44,000 parts In-Stock

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44,000

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Lixinc

USA . 15,840 parts In-Stock

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15,840

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,536 parts In-Stock

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4,536

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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iodParts Technologies Inc.

India . 2,915 parts In-Stock

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2,915

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Overview

Looking for a reliable and high-quality solution for your small signal field effect transistor needs? Look no further than the DMG1029SVQ-7 by Diodes Incorporated. With a reputation for excellence in semiconductor technology, Diodes Incorporated delivers products that exceed expectations. The DMG1029SVQ-7 offers the perfect balance of performance and efficiency for switching applications. Its N-channel and P-channel configuration with built-in diode ensures seamless operation. Experience the value and benefits of this enhancement mode transistor in a convenient small outline package. Trust Diodes Incorporated to provide innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types increases flexibility and allows for use in a wider range of circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode improves efficiency and reliability in switching applications, making this transistor a reliable choice.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast response times and efficient operation.

Surface Mount: YES

Surface mount capability facilitates easy integration into compact electronic circuits, saving valuable space.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without failure, making it suitable for various applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and ensures a strong and reliable connection in circuit assembly.

Maximum Drain Current (ID): 0.5 A

Capable of handling a maximum drain current of 0.5 A, this transistor is suitable for low to medium power applications.

Maximum Drain-Source On Resistance: 1.7 ohm

Low on-resistance results in minimal power loss and efficient operation, making this transistor an energy-efficient choice.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG1029SVQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG1029SVQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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