Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
DMG1016UDW-7 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 20V DS breakdown voltage, 0.45ohm RDS(on), and 1.066A ID max. Ideal for enhancement mode operation in compact SOT package with -55 to 150°C temp range.
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$0.101
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Arrow
$0.383
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Mouser Electronics
$0.560
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Element14
Farnell
$0.107
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Verical
$0.088
Newark
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Maritex
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Nova Conductors
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Bristol Electronics
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TME
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ComSIT Distribution GmbH
LIBRA Elektronik GmbH
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ACDS - Activité Composants Distribution Service
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Avant Electronics Limited
Prism Electronics
Semicontronic
$0.038
Ampacity Inc.
Modulus Dynamics
$0.116
Corohmni
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Allen Electronics Distributors
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Aztec Data Supply Inc.
$1.030
Advanced Electronics
$2.054
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Perfect Parts
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RC Electronics
S.R.D Solutions
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Lixinc
Alle Elektronik GmbH
Netroflash
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Robosynatics
Futuretech Components
Plastic/epoxy packaging is lightweight and cost-effective, making it suitable for a variety of applications.
Having both N-channel and P-channel types allows for versatility in circuit design and compatibility with different systems.
A higher breakdown voltage provides better protection and reliability in high voltage applications.
Designed specifically for switching applications, ensuring efficient performance in on/off scenarios.
Capable of handling relatively high drain currents, making it suitable for power electronics applications.
Low on-resistance results in reduced power losses and improved efficiency in operation.
With a high maximum operating temperature, the transistor can withstand elevated temperatures without performance degradation.
Matte tin finish provides good solderability and ensures reliable electrical connections.
Small Signal Field Effect Transistors (FET) DMG1016UDW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMG1016UDW-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.95
SB
8541.21.00.80
PCN Design/Specification - Bond Wire 3/May/2011
PCN Assembly/Origin - Assembly REV 07/Sep/2021
PCN Other - Multiple Device Changes 29/Apr/2013
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
1N4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Shenzhen Yixinsemi Electronics
LL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Excel (Suzhou) Semiconductor
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
LM555CMX
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
Central Semiconductor
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
NE555DR
Texas Instruments
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
BAV99
Kingwell Technonlogy
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT54C-7-F
Diodes Incorporated
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
AT90CAN128-16AU
AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.
SMBJ18CA
Changzhou Starsea Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BC548B
Sprague Electric
NPN; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel;
ZVP1320FTA
ZVP1320FTA by Diodes Inc. is a P-CHANNEL FET with 200V DS Breakdown Voltage, 0.035A Drain Current, and 80 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation. Suitable for use in various electronic circuits requiring low power dissipation and high voltage tolerance.
MMBF170LT3G
MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
BSS138LT1
Onsemi's BSS138LT1 is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C temperature range. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
2N7002KW
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Terminal Position: DUAL; Qualification: Not Qualified;
SI2328DS-T1-E3
SI2328DS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1.15A Drain Current, and 0.25 ohm On Resistance. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, GULL WING terminals, and compact SMALL OUTLINE package style.
FDC6420C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
FDMA1032CZ
FDMA1032CZ by Onsemi is a Small Signal FET with N-CHANNEL and P-CHANNEL configurations. It features 2 elements with built-in diode for switching applications. With a max drain current of 3.7A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS138BKAHZGT116
ROHM
ROHM BSS138BKAHZGT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS. Ideal for SWITCHING applications in small outline packages. Operating range from -55 to 150 °C with AEC-Q101 standard compliance.
IRF9310TRPBF-1
Infineon Technologies
Infineon's IRF9310TRPBF-1 is a P-channel FET with 30V breakdown voltage, 20A max drain current, and 0.0046 ohm on-resistance. Ideal for enhancement mode operation in applications requiring high power efficiency and compact design. Features gull wing terminals in a small outline package for surface mount assembly.
BSS138_NL
BSS138_NL by Fairchild Semiconductor is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 6 ohm RDS. It is used for switching applications in enhancement mode with a max operating temperature of 150°C.
2N7002T
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; No. of Elements: 1; Maximum Drain Current (ID): .115 A;
FDV301N
FDV301N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 0.22A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.35W. This small outline transistor has a temperature range of -55 to 150 °C and features a built-in diode for efficient performance.
IRFL9110TRPBF
Vishay Intertechnology's IRFL9110TRPBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
BSS169H6327XTSA1
BSS169H6327XTSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.17A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in depletion mode, and has a max power dissipation of 0.36W.
MMBF4117
MMBF4117 by Onsemi is a N-CHANNEL FET in PLASTIC/EPOXY package, ideal for SWITCHING applications. With 3 terminals and 0.225W power dissipation, it operates in DEPLETION MODE at up to 150°C. Featuring GULL WING terminals and 1.5pF feedback capacitance, it's a versatile choice for small outline surface mount designs.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
BSS84,215
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
BSS209PWH6327XTSA1
BSS209PWH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.63A ID, and 0.55 ohm RDS(ON). It is used in small outline applications requiring a single configuration with built-in diode for enhancement mode operation.
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DMG1012T-7
DMG1012T-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage, 0.63A max drain current, and 0.4ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. This small outline transistor has a matte tin finish and built-in diode for efficient performance.
DMG1029SV-7
DMG1029SV-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. Features include 60V DS breakdown voltage, 0.5A max drain current, and 1W max power dissipation. Utilizes MOSFET tech with 1.7 ohm RDS(on) for efficient operation in enhancement mode at up to 150°C.
DMG1013UW-7
DMG1013UW-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 0.82A drain current, and 0.75 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.31W. This small outline transistor has a peak reflow temp of 260°C and matte tin terminal finish.
DMG1013T-7
DMG1013T-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 0.46A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.27W.
DMG1012UW-7
DMG1012UW-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.45 ohm on-resistance. Its small outline package and -55 to 150°C operating range make it suitable for various electronic devices.
DMG1026UV-7
DMG1026UV-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.41A max drain current, and 1.8 ohm max on resistance. Ideal for switching applications in small outline packages, operating at up to 150°C peak reflow temperature.
DMG1012TQ-7
DMG1012TQ-7 by Diodes Inc. is a N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.63A, and max power dissipation of 0.28W. This enhancement mode transistor operates at up to 150°C and is designed for surface mount in automotive electronics (AEC-Q101).
DMG1029SVQ-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
DMG1024UV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .45 ohm;
DMG1012T-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .63 A;
DMG1012UWQ-7
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
DMG1013UWQ-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Peak Reflow Temperature (C): 260; Additional Features: HIGH RELIABILITY;
DMG1016UDWQ-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Transistor Application: SWITCHING; Terminal Position: DUAL;
DMG1013UWQ-13
DMG1013UWQ-13 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.82A ID, and 0.75 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, it operates from -55 to 150 °C with 6.36pF Crss and AEC-Q101 compliance.
DMG1023UV-7
DMG1023UV-7 by Diodes Inc. is a P-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 1.03A, low on-resistance of 0.75 ohm, and operates in enhancement mode. With a package style of small outline and peak reflow temp of 260°C, it's suitable for compact electronic devices requiring efficient power management.
DMG1013TQ-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
DMG1016V-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; No. of Terminals: 6; Peak Reflow Temperature (C): 260;
DMG1016VQ-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; Terminal Finish: MATTE TIN; JESD-30 Code: R-PDSO-F6;
DMG1023UV-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE;
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