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DMC6070LND-7

Diodes Incorporated

DMC6070LND-7 by Diodes Incorporated

DMC6070LND-7 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements, and built-in diode for switching applications. It operates in enhancement mode with max drain current of 2.4A and min DS breakdown voltage of 60V. This MOSFET has a package style of small outline, suitable for surface mount assembly at temperatures ranging from -55 to 150°C.

Median Price

$1.160

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,373 parts In-Stock

1+ parts

$1.160

100+ parts

$0.476

1k+ parts

$0.338

10k+ parts

$0.262

1,373

$1.160

$0.476

$0.338

$0.262

DigiKey

USA . 1,750 parts In-Stock

1+ parts

$1.180

100+ parts

$0.486

1k+ parts

$0.343

10k+ parts

$0.263

1,750

$1.180

$0.486

$0.343

$0.263

Verical

USA . 78,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.263

78,000

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$0.263

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 39,300 parts In-Stock

1+ parts

$0.224

100+ parts

-

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39,300

$0.224

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Component Stockers USA

USA . 3,072 parts In-Stock

1+ parts

$0.770

100+ parts

$0.460

1k+ parts

$0.330

10k+ parts

-

3,072

$0.770

$0.460

$0.330

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Native Components

USA . 550 parts In-Stock

1+ parts

$32.630

100+ parts

-

1k+ parts

-

10k+ parts

$31.325

550

$32.630

-

-

$31.325

Northwest PG Solutions

USA . 424 parts In-Stock

1+ parts

$35.893

100+ parts

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424

$35.893

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iodParts Technologies Inc.

India . 4,000 parts In-Stock

1+ parts

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4,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Eastek

USA . 2,000 parts In-Stock

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2,000

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Formix International (Excess)

India . 109 parts In-Stock

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Overview

Unleash the power of innovation with the DMC6070LND-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal field effect transistors that excel in switching applications. With separate N-channel and P-channel elements, this transistor offers enhanced performance and reliability. Experience the benefits of the DMC6070LND-7's high DS breakdown voltage and low on-resistance, all packaged in a convenient small outline design for easy installation. Elevate your projects with the unmatched value and efficiency of Diodes Incorporated's field effect transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode helps in efficient switching applications and provides protection against reverse current.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable enables easy integration onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, the transistor can handle higher voltages, suitable for various electronic devices.

Package Shape: SQUARE

Square package shape provides stability and ease of mounting in electronic circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control and modulation of the transistor, enhancing performance in switching applications.

No. of Elements: 2

Having 2 elements provides versatility in circuit design and applications.

No. of Terminals: 8

The 8 terminals allow for connectivity and easy integration with other components in a circuit.

Maximum Power Dissipation (Abs): 1.4 W

With a maximum power dissipation of 1.4W, the transistor can handle high power loads efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and makes the transistor suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures reliable performance and efficiency in operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperature environments.

Transistor Element Material: SILICON

Silicon material for transistor elements ensures high performance and reliability.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, the transistor can function in cold environments as well.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good conductivity and solderability for easy integration.

Maximum Drain Current (ID): 2.4 A

Having a maximum drain current of 2.4A allows for handling larger currents in the circuit.

Maximum Drain-Source On Resistance: 0.085 ohm

Low drain-source on resistance of 0.085 ohm ensures efficient power handling and minimal losses in the circuit.

Terminal Position: DUAL

Dual terminal position allows for versatile connectivity options in a circuit.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC6070LND-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-F8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC6070LND-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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