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DMC6040SSDQ-13

Diodes Incorporated

DMC6040SSDQ-13 by Diodes Incorporated

Diodes Inc. DMC6040SSDQ-13 is a Small Signal FET with N/P-channel, 2 elements w/ diode. Ideal for switching applications, it has 60V DS breakdown voltage, 0.04Ω RDS(on), and 5.1A ID max current. Features include SMD package, dual terminals, and AEC-Q101 compliance.

Median Price

$1.340

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,594 parts In-Stock

1+ parts

$1.340

100+ parts

$0.555

1k+ parts

$0.432

10k+ parts

-

3,594

$1.340

$0.555

$0.432

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DigiKey

USA . 774 parts In-Stock

1+ parts

$1.340

100+ parts

$0.555

1k+ parts

$0.392

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774

$1.340

$0.555

$0.392

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Avnet

USA . 2,500 parts In-Stock

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2,500

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Verical

USA . 2,500 parts In-Stock

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$0.269

2,500

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$0.269

Distributors (In-Stock)

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.369

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750

$0.369

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Vyrian

USA . 205,187 parts In-Stock

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205,187

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Chip Stock

USA . 19,000 parts In-Stock

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19,000

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NAC Semi

USA . 12,500 parts In-Stock

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12,500

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IBS Electronics

USA . 5,000 parts In-Stock

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$0.291

5,000

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$0.291

Distributors (Availability)

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Ampacity Inc.

Singapore . 205,500 parts In-Stock

1+ parts

$0.233

100+ parts

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205,500

$0.233

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Semicontronic

India . 205,476 parts In-Stock

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$0.233

100+ parts

$0.227

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$0.226

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205,476

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$0.226

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Continental Prestige Electronics

USA . 2,246 parts In-Stock

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$0.369

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$0.362

2,246

$0.369

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$0.362

Argo Parts USA

USA . 1,330 parts In-Stock

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$0.369

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$0.358

1,330

$0.369

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$0.358

Corohmni

South Africa . 156 parts In-Stock

1+ parts

$0.387

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156

$0.387

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Aztec Data Supply Inc.

USA . 1,680 parts In-Stock

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$0.762

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1,680

$0.762

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RC Electronics

USA . 65,382 parts In-Stock

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65,382

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Eastek

USA . 2,500 parts In-Stock

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$0.430

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2,500

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$0.430

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Lixinc

USA . 966 parts In-Stock

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966

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Overview

Unlock the power of innovation with the DMC6040SSDQ-13 by Diodes Incorporated. As a leading manufacturer in small signal field-effect transistors, Diodes Incorporated delivers top-quality products designed for switching applications. This versatile transistor features N-channel and P-channel configurations, ensuring seamless operation in a variety of electronic devices. With a minimum DS breakdown voltage of 60V and maximum drain current of 5.1A, this transistor offers reliable performance and efficiency. Trust Diodes Incorporated to provide cutting-edge technology that meets your needs for enhanced functionality and value. Elevate your projects with the DMC6040SSDQ-13 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers versatility for different circuit designs and applications, allowing for both N-channel and P-channel configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for independent control of each element, giving flexibility in circuit design. The built-in diode simplifies polarity protection circuitry.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient performance in switching operations.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly processes in electronic devices.

Maximum Drain Current (ID): 5.1 A

Capable of handling high currents, making it suitable for power applications where high current is required.

Maximum Drain-Source On Resistance: 0.04 ohm

Low on-resistance leads to efficient power handling and minimal power loss, contributing to overall energy efficiency.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for improved performance, low power consumption, and fast switching speeds.

Reference Standard: AEC-Q101

Complies with automotive industry standards, ensuring reliability and quality for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC6040SSDQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

5.1 A

Maximum Drain-Source On Resistance:

.04 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC6040SSDQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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