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DGTD65T15H2TF

Diodes Incorporated

DGTD65T15H2TF by Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Maximum Collector Current (IC): 30 A; Package Style (Meter): FLANGE MOUNT;

Median Price

$1.930

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 828 parts In-Stock

1+ parts

$1.420

100+ parts

$0.849

1k+ parts

$0.745

10k+ parts

$0.718

828

$1.420

$0.849

$0.745

$0.718

Arrow

USA . 13,000 parts In-Stock

1+ parts

$1.472

100+ parts

$1.038

1k+ parts

$0.798

10k+ parts

-

13,000

$1.472

$1.038

$0.798

-

DigiKey

USA . 500 parts In-Stock

1+ parts

$1.930

100+ parts

$1.390

1k+ parts

$0.946

10k+ parts

$0.848

500

$1.930

$1.390

$0.946

$0.848

Mouser Electronics

USA . 555 parts In-Stock

1+ parts

$1.970

100+ parts

$1.420

1k+ parts

$0.923

10k+ parts

-

555

$1.970

$1.420

$0.923

-

Farnell

UK . 723 parts In-Stock

1+ parts

$2.080

100+ parts

$1.000

1k+ parts

$0.749

10k+ parts

$0.662

723

$2.080

$1.000

$0.749

$0.662

Element14

Singapore . 850 parts In-Stock

1+ parts

$2.820

100+ parts

$1.810

1k+ parts

$1.350

10k+ parts

$1.330

850

$2.820

$1.810

$1.350

$1.330

Verical

USA . 12,996 parts In-Stock

1+ parts

-

100+ parts

$1.195

1k+ parts

$0.807

10k+ parts

$0.807

12,996

-

$1.195

$0.807

$0.807

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 474 parts In-Stock

1+ parts

$2.520

100+ parts

$1.080

1k+ parts

$0.950

10k+ parts

-

474

$2.520

$1.080

$0.950

-

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 962 parts In-Stock

1+ parts

$1.930

100+ parts

$1.170

1k+ parts

$0.802

10k+ parts

-

962

$1.930

$1.170

$0.802

-

Microchip USA

USA . 9,226 parts In-Stock

1+ parts

$12.415

100+ parts

-

1k+ parts

-

10k+ parts

-

9,226

$12.415

-

-

-

Perfect Parts

USA . 16,968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,968

-

-

-

-

Northwest PG Solutions

USA . 1,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,020

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.990

10k+ parts

-

1,000

-

-

$0.990

-

iodParts Technologies Inc.

India . 578 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

578

-

-

-

-

Native Components

USA . 490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

490

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) DGTD65T15H2TF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

280 ns

Nominal Turn On Time (ton):

46 ns

Maximum VCEsat:

2 V

Trade Compliance

DGTD65T15H2TF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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