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DDTD142JC-7-F

Diodes Incorporated

DDTD142JC-7-F by Diodes Incorporated

DDTD142JC-7-F by Diodes Inc. is a NPN BJT with 40V VCEO, 0.5A IC, and 200MHz fT. It comes in a small outline package and has a built-in resistor. Ideal for low-power applications requiring high transition frequency.

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 152,769 parts In-Stock

1+ parts

$0.270

100+ parts

$0.102

1k+ parts

$0.066

10k+ parts

$0.046

152,769

$0.270

$0.102

$0.066

$0.046

Mouser Electronics

USA . 38,487 parts In-Stock

1+ parts

$0.270

100+ parts

$0.102

1k+ parts

$0.067

10k+ parts

$0.046

38,487

$0.270

$0.102

$0.067

$0.046

Verical

USA . 75,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

75,000

-

-

-

$0.035

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

6,000

-

-

-

$0.028

Farnell

UK . 180 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

$0.057

10k+ parts

$0.039

180

-

$0.086

$0.057

$0.039

Element14

Singapore . 180 parts In-Stock

1+ parts

-

100+ parts

$0.148

1k+ parts

$0.067

10k+ parts

$0.054

180

-

$0.148

$0.067

$0.054

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 50 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

50

$0.770

$0.580

$0.500

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 60,188 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

60,188

$0.024

-

-

-

Modulus Dynamics

Lithuania . 6,119 parts In-Stock

1+ parts

$0.404

100+ parts

$0.404

1k+ parts

$0.404

10k+ parts

-

6,119

$0.404

$0.404

$0.404

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.120

100+ parts

$1.019

1k+ parts

$0.918

10k+ parts

-

50

$1.120

$1.019

$0.918

-

Corohmni

South Africa . 246 parts In-Stock

1+ parts

$1.718

100+ parts

-

1k+ parts

-

10k+ parts

-

246

$1.718

-

-

-

Perfect Parts

USA . 41,497 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

41,497

-

-

-

-

Lixinc

USA . 7,106 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

7,106

-

-

-

-

Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.030

10k+ parts

-

6,000

-

-

$0.030

-

Argo Parts USA

USA . 4,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,079

-

-

-

-

Glotronic Ltd.

UK . 3,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,790

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Continental Prestige Electronics

USA . 1,780 parts In-Stock

1+ parts

-

100+ parts

$0.128

1k+ parts

$0.056

10k+ parts

$0.034

1,780

-

$0.128

$0.056

$0.034

Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Discover the superior performance and reliability of the DDTD142JC-7-F by Diodes Incorporated, a leading manufacturer known for producing top-quality small signal bipolar junction transistors. Ideal for a wide range of applications, this NPN transistor with a built-in resistor offers unmatched value and benefits to customers seeking efficient and high-performing electronic components. Experience the advantage of superior design and precision engineering with the DDTD142JC-7-F, providing you with the power and versatility you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile in various circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, reducing component count and saving space.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

Utilizes space efficiently on the circuit board.

Terminal Form: GULL WING

Provides secure soldering connections for reliable performance.

No. of Terminals: 3

Simple and straightforward connection for circuit integration.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low power applications, ensuring efficient operation.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained designs.

Minimum DC Current Gain (hFE): 56

Consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures for reliable performance in various environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for a wide range of voltage applications.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability.

Maximum Collector Current (IC): 0.5 A

Adequate current capacity for many small signal applications.

Terminal Finish: MATTE TIN

Provides a reliable connection and prevents oxidation of terminals.

Terminal Position: DUAL

Simplifies circuit design and connection.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reliability during reflow processes.

Peak Reflow Temperature °C: 260

Sufficient temperature for proper soldering and assembly processes.

Nominal Transition Frequency (fT): 200 MHz

High frequency capability for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTD142JC-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 21.28

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTD142JC-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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