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DDTD123YC-7-F

Diodes Incorporated

DDTD123YC-7-F by Diodes Incorporated

DDTD123YC-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. Features include 0.2W power dissipation, 56 min hFE, and 200MHz fT. Suitable for surface mount designs requiring a compact package with high transition frequency.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,510 parts In-Stock

1+ parts

$0.270

100+ parts

$0.102

1k+ parts

$0.066

10k+ parts

$0.058

11,510

$0.270

$0.102

$0.066

$0.058

DigiKey

USA . 6 parts In-Stock

1+ parts

$0.270

100+ parts

$0.101

1k+ parts

$0.066

10k+ parts

$0.046

6

$0.270

$0.101

$0.066

$0.046

Newark

USA . 1,955 parts In-Stock

1+ parts

$0.306

100+ parts

$0.099

1k+ parts

$0.059

10k+ parts

-

1,955

$0.306

$0.099

$0.059

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Verical

USA . 846,000 parts In-Stock

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$0.029

846,000

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-

$0.029

Farnell

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.121

1k+ parts

$0.055

10k+ parts

$0.049

3,000

-

$0.121

$0.055

$0.049

Element14

Singapore . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.207

1k+ parts

$0.085

10k+ parts

$0.065

3,000

-

$0.207

$0.085

$0.065

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 37 parts In-Stock

1+ parts

$0.063

100+ parts

-

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37

$0.063

-

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Vyrian

USA . 151,592 parts In-Stock

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151,592

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NAC Semi

USA . 27,000 parts In-Stock

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27,000

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IBS Electronics

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

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$0.068

27,000

-

-

-

$0.068

A&K Electronics

USA . 16,949 parts In-Stock

1+ parts

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16,949

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Bristol Electronics

USA . 8,508 parts In-Stock

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8,508

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Rotakorn

Sweden . 8,441 parts In-Stock

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8,441

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Distributors (Availability)

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Ampacity Inc.

Singapore . 225,218 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

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10k+ parts

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225,218

$0.025

-

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Semicontronic

India . 198,054 parts In-Stock

1+ parts

$0.025

100+ parts

$0.024

1k+ parts

$0.024

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198,054

$0.025

$0.024

$0.024

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

$0.059

10k+ parts

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2,000

$0.061

-

$0.059

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Argo Parts USA

USA . 1,069 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

1,069

$0.063

-

-

$0.061

Corohmni

South Africa . 32 parts In-Stock

1+ parts

$0.063

100+ parts

-

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32

$0.063

-

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Component Stockers USA

USA . 1,004,064 parts In-Stock

1+ parts

$0.300

100+ parts

$0.080

1k+ parts

$0.060

10k+ parts

$0.030

1,004,064

$0.300

$0.080

$0.060

$0.030

Aztec Data Supply Inc.

USA . 203 parts In-Stock

1+ parts

$1.643

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203

$1.643

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Metaverse IC Inc.

Canada . 252,000 parts In-Stock

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Perfect Parts

USA . 144,762 parts In-Stock

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Eastek

USA . 36,000 parts In-Stock

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Lixinc

USA . 14,014 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,181 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 2,385 parts In-Stock

1+ parts

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100+ parts

$0.080

1k+ parts

$0.055

10k+ parts

$0.035

2,385

-

$0.080

$0.055

$0.035

Overview

Enhance your electronic designs with the DDTD123YC-7-F by Diodes Incorporated, a top-tier manufacturer known for quality and reliability. This small signal bipolar junction transistor (BJT) offers NPN polarity in a compact rectangular package, making it ideal for a wide range of applications. With a built-in resistor and high DC current gain, this transistor provides exceptional performance and efficiency. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the DDTD123YC-7-F and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and compatibility with a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Surface Mount: YES

Surface mount capability enables easy placement and soldering onto PCBs, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular package shape is common and easy to work with in various applications.

Terminal Form: GULL WING

The gull wing terminal form provides a strong mechanical connection and ease of soldering during assembly.

No. of Terminals: 3

The three terminals offer flexibility in circuit design and connection options.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for compact designs.

Minimum DC Current Gain (hFE): 56

The minimum DC current gain of 56 ensures reliable and consistent performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for a wide range of voltage applications.

Transistor Element Material: SILICON

The silicon material ensures high performance, reliability, and long-term stability.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current loads.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and resistance to oxidation.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor is easy to solder onto PCBs.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering during assembly.

Nominal Transition Frequency (fT): 200 MHz

The nominal transition frequency of 200MHz enables high-speed switching and amplification in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTD123YC-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.54

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTD123YC-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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