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DDTD113ZC-7-F

Diodes Incorporated

DDTD113ZC-7-F by Diodes Incorporated

DDTD113ZC-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. With a max power dissipation of 0.2W, it operates up to 150°C and has a max collector-emitter voltage of 50V. Featuring a transition frequency of 200MHz, this transistor is suitable for high-frequency circuits in compact designs.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 67,517 parts In-Stock

1+ parts

$0.270

100+ parts

$0.102

1k+ parts

$0.065

10k+ parts

$0.037

67,517

$0.270

$0.102

$0.065

$0.037

DigiKey

USA . 1,666 parts In-Stock

1+ parts

$0.270

100+ parts

$0.101

1k+ parts

$0.066

10k+ parts

$0.046

1,666

$0.270

$0.101

$0.066

$0.046

Newark

USA . 309 parts In-Stock

1+ parts

$0.306

100+ parts

$0.099

1k+ parts

$0.059

10k+ parts

-

309

$0.306

$0.099

$0.059

-

Verical

USA . 3,399,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

3,399,000

-

-

-

$0.029

Element14

Singapore . 334 parts In-Stock

1+ parts

-

100+ parts

$0.148

1k+ parts

$0.095

10k+ parts

$0.094

334

-

$0.148

$0.095

$0.094

Farnell

UK . 309 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.075

10k+ parts

$0.065

309

-

$0.102

$0.075

$0.065

Arrow

USA . 40 parts In-Stock

1+ parts

-

100+ parts

$0.032

1k+ parts

-

10k+ parts

-

40

-

$0.032

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$0.063

-

-

-

NAC Semi

USA . 1,143,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

1,143,000

-

-

-

$0.039

Vyrian

USA . 550,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

550,980

-

-

-

-

Bristol Electronics

USA . 15,899 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

$0.052

10k+ parts

$0.035

15,899

-

$0.086

$0.052

$0.035

Dan-Mar Components

USA . 15,899 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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15,899

-

-

-

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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3,000

-

-

-

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IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.067

3,000

-

-

-

$0.067

South Electronics

USA . 20 parts In-Stock

1+ parts

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20

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 551,027 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

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551,027

$0.025

-

-

-

Continental Prestige Electronics

USA . 2,905 parts In-Stock

1+ parts

$0.231

100+ parts

$0.101

1k+ parts

$0.046

10k+ parts

$0.029

2,905

$0.231

$0.101

$0.046

$0.029

Perfect Parts

USA . 81,351 parts In-Stock

1+ parts

-

100+ parts

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81,351

-

-

-

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GreenTree Electronics

Israel . 81,000 parts In-Stock

1+ parts

-

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81,000

-

-

-

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Eastek

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

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54,000

-

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.060

10k+ parts

$0.059

2,000

-

$0.062

$0.060

$0.059

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,000

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Overview

Discover the power of the DDTD113ZC-7-F by Diodes Incorporated, a top-quality small signal bipolar junction transistor that offers unmatched performance and reliability. With Diodes Incorporated's reputation for excellence in manufacturing, this NPN transistor with a built-in resistor is perfect for a wide range of applications. Whether you're looking to amplify signals or switch electronic circuits, this product delivers exceptional value, efficiency, and precision. Upgrade your projects today with the DDTD113ZC-7-F and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for different electronic projects.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making the transistor easier to incorporate into designs.

Surface Mount: YES

Surface mount capability allows for automated assembly processes, increasing efficiency in manufacturing.

Package Shape: RECTANGULAR

Rectangular shape is standard and easy to work with in circuit layouts and PCB designs.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power requirements in circuits.

Minimum DC Current Gain (hFE): 56

A minimum DC current gain of 56 ensures reliable amplification performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature conditions.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for use in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material offers stable and consistent performance, ensuring reliability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current flow in circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for reliable connections in circuit assemblies.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200MHz allows for fast switching speeds in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTD113ZC-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTD113ZC-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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