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DDTD114EC-7-F

Diodes Incorporated

DDTD114EC-7-F by Diodes Incorporated

DDTD114EC-7-F by Diodes Inc. is a NPN BJT with built-in resistor, 0.2W power dissipation, and 50V collector-emitter voltage. Ideal for small outline applications requiring a 200MHz transition frequency, it features gull wing terminals and operates up to 150°C in surface-mount designs.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,542 parts In-Stock

1+ parts

$0.250

100+ parts

$0.096

1k+ parts

$0.060

10k+ parts

$0.038

5,542

$0.250

$0.096

$0.060

$0.038

Newark

USA . 2,005 parts In-Stock

1+ parts

$0.250

100+ parts

$0.095

1k+ parts

$0.061

10k+ parts

-

2,005

$0.250

$0.095

$0.061

-

DigiKey

USA . 34 parts In-Stock

1+ parts

$0.250

100+ parts

$0.096

1k+ parts

$0.062

10k+ parts

$0.043

34

$0.250

$0.096

$0.062

$0.043

Verical

USA . 450,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

450,000

-

-

-

$0.029

Future Electronics

Canada . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

6,000

-

-

-

$0.028

Farnell

UK . 2,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.048

10k+ parts

$0.047

2,125

-

-

$0.048

$0.047

Element14

Singapore . 2,125 parts In-Stock

1+ parts

-

100+ parts

$7.350

1k+ parts

$4.980

10k+ parts

$4.890

2,125

-

$7.350

$4.980

$4.890

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.048

6,000

-

-

-

$0.048

Sensible Micro Corp

USA . 1,963 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,963

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 155 parts In-Stock

1+ parts

$0.151

100+ parts

-

1k+ parts

-

10k+ parts

$0.145

155

$0.151

-

-

$0.145

Northwest PG Solutions

USA . 1,433 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

$0.146

1,433

$0.166

-

-

$0.146

Continental Prestige Electronics

USA . 2,375 parts In-Stock

1+ parts

$0.319

100+ parts

$0.126

1k+ parts

$0.055

10k+ parts

$0.035

2,375

$0.319

$0.126

$0.055

$0.035

Advanced Electronics

New Zealand . 21 parts In-Stock

1+ parts

$1.712

100+ parts

$1.558

1k+ parts

$1.404

10k+ parts

-

21

$1.712

$1.558

$1.404

-

Authorized Procurement Solutions

USA . 5,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,500

-

-

-

-

Glotronic Ltd.

UK . 3,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,790

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Discover the power of innovation with the DDTD114EC-7-F by Diodes Incorporated. As a leader in the industry, Diodes Incorporated delivers top-notch quality and reliability in their Small Signal Bipolar Junction Transistors. With its NPN polarity, single configuration, and built-in resistor, this product offers unparalleled performance for a wide range of applications. From consumer electronics to automotive systems, the DDTD114EC-7-F provides superior value, efficiency, and functionality, making it the ideal choice for your next project. Experience the difference with Diodes Incorporated today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in low power applications and allows for easy integration into circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor.

Surface Mount: YES

Enables easy and efficient mounting onto circuit boards, saving space and improving assembly efficiency.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low power applications, reducing the risk of overheating and ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact design allows for space-efficient integration into electronic devices.

Maximum Collector-Emitter Voltage: 50 V

Capable of handling higher voltages, making it versatile for a range of applications.

Nominal Transition Frequency (fT): 200 MHz

High frequency capability enables fast switching speeds, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTD114EC-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTD114EC-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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