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ADTC143TUAQ-7

Diodes Incorporated

ADTC143TUAQ-7 by Diodes Incorporated

ADTC143TUAQ-7 by Diodes Inc. is a NPN BJT with built-in resistor, featuring hFE of 100 and VCE of 50V. Ideal for small outline applications, it offers a transition frequency of 250MHz making it suitable for high-speed switching in automotive electronics under AEC-Q101 standard.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,685 parts In-Stock

1+ parts

$0.220

100+ parts

$0.083

1k+ parts

$0.053

10k+ parts

$0.032

2,685

$0.220

$0.083

$0.053

$0.032

DigiKey

USA . 38 parts In-Stock

1+ parts

$0.220

100+ parts

$0.082

1k+ parts

$0.053

10k+ parts

$0.037

38

$0.220

$0.082

$0.053

$0.037

Verical

USA . 159,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

159,000

-

-

-

$0.024

Arrow

USA . 2,938 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.016

2,938

-

-

-

$0.016

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 828 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

-

828

$1.112

-

-

-

Northwest PG Solutions

USA . 995 parts In-Stock

1+ parts

$1.224

100+ parts

-

1k+ parts

-

10k+ parts

-

995

$1.224

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Elevate your electronic designs with the ADTC143TUAQ-7 by Diodes Incorporated. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers reliability and performance that surpasses industry standards. Whether you're working on automotive, industrial, or consumer electronics, this NPN transistor with a built-in resistor is the perfect choice for your applications. Experience superior quality, efficiency, and value with the ADTC143TUAQ-7 – the ultimate solution for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and mechanical protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used in amplification circuits and versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor, saving space and reducing components needed.

Surface Mount: YES

Easy to mount on PCBs, saving assembly time and suitable for automated manufacturing processes.

Maximum Collector-Emitter Voltage: 50V

Suitable for low voltage applications, providing safety margin for voltage spikes or fluctuations.

Nominal Transition Frequency (fT): 250 MHz

High frequency capability allows for fast switching operations and high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTC143TUAQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTC143TUAQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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