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ADTC114EUAQ-7

Diodes Incorporated

ADTC114EUAQ-7 by Diodes Incorporated

Diodes Inc. ADTC114EUAQ-7 is a NPN BJT with hFE of 30, VCE of 50V, and fT of 250MHz. It's used in automotive applications due to AEC-Q101 compliance, built-in resistor, and small outline package for space-constrained designs.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,164 parts In-Stock

1+ parts

$0.190

100+ parts

$0.072

1k+ parts

$0.049

10k+ parts

$0.037

3,164

$0.190

$0.072

$0.049

$0.037

DigiKey

USA . 431 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.049

10k+ parts

$0.034

431

$0.200

$0.076

$0.049

$0.034

Verical

USA . 6,348,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.020

6,348,000

-

-

-

$0.020

Element14

Singapore . 1,889 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.044

10k+ parts

$0.041

1,889

-

-

$0.044

$0.041

Farnell

UK . 1,734 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.031

10k+ parts

-

1,734

-

-

$0.031

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ashlea Components Ltd

UK . 8,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,018,095 parts In-Stock

1+ parts

$0.017

100+ parts

-

1k+ parts

-

10k+ parts

-

1,018,095

$0.017

-

-

-

Continental Prestige Electronics

USA . 1,224 parts In-Stock

1+ parts

$0.153

100+ parts

$0.053

1k+ parts

$0.024

10k+ parts

-

1,224

$0.153

$0.053

$0.024

-

Native Components

USA . 9 parts In-Stock

1+ parts

$0.235

100+ parts

-

1k+ parts

-

10k+ parts

$0.226

9

$0.235

-

-

$0.226

Northwest PG Solutions

USA . 523 parts In-Stock

1+ parts

$0.258

100+ parts

-

1k+ parts

-

10k+ parts

$0.228

523

$0.258

-

-

$0.228

Perfect Parts

USA . 23,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,520

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Experience unparalleled performance and reliability with the ADTC114EUAQ-7 by Diodes Incorporated, a leading manufacturer in the industry. This small signal bipolar junction transistor (BJT) boasts high-quality construction and a wide range of applications, making it an essential component for various electronic devices. With its NPN polarity, single configuration, and built-in resistor, this transistor offers exceptional value and benefits to customers looking for efficiency and precision in their projects. Trust Diodes Incorporated to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: NPN

Suitable for use in applications requiring an NPN transistor configuration.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor, saving space and reducing component count.

Surface Mount: YES

Allows for easy and secure surface mounting on PCBs, making it convenient for automated assembly processes.

Package Shape: RECTANGULAR

Enables efficient placement and layout on PCBs, optimizing space utilization.

No. of Terminals: 3

Provides the necessary connections for proper operation, ensuring compatibility with circuit requirements.

Minimum DC Current Gain (hFE): 30

Ensures consistent and reliable amplification of signals in various applications.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, offering versatility in circuit design.

Transistor Element Material: SILICON

Provides high performance and reliability, making the transistor ideal for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Supports low to moderate current requirements, making it suitable for various electronic circuits.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and solderability, facilitating reliable connections during assembly.

Terminal Position: DUAL

Allows for easy and secure soldering of connections, ensuring stable operation in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Provides a safe reflow profile for the transistor during assembly, preventing damage from excessive heat exposure.

Peak Reflow Temperature °C: 260

Meets industry standards for reflow soldering, ensuring proper and reliable solder joints.

Reference Standard: AEC-Q101

Complies with automotive industry standards, making it suitable for automotive applications requiring high reliability.

Nominal Transition Frequency (fT): 250 MHz

Enables high-frequency signal amplification, making the transistor suitable for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTC114EUAQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTC114EUAQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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