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ADTC114YUAQ-7

Diodes Incorporated

ADTC114YUAQ-7 by Diodes Incorporated

ADTC114YUAQ-7 by Diodes Inc. is a NPN BJT with built-in resistor, hFE of 68, VCE of 50V, and fT of 250MHz. Ideal for automotive applications due to AEC-Q101 compliance, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,360 parts In-Stock

1+ parts

$0.220

100+ parts

$0.082

1k+ parts

$0.053

10k+ parts

$0.037

2,360

$0.220

$0.082

$0.053

$0.037

Mouser Electronics

USA . 12 parts In-Stock

1+ parts

$0.240

100+ parts

$0.097

1k+ parts

$0.056

10k+ parts

$0.044

12

$0.240

$0.097

$0.056

$0.044

Verical

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

90,000

-

-

-

$0.024

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 5,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,850

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-

-

-

VNN

France . 1,354 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,354

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-

-

-

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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700

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 25,156 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

-

10k+ parts

-

25,156

$0.020

-

-

-

Corohmni

South Africa . 66 parts In-Stock

1+ parts

$1.635

100+ parts

-

1k+ parts

-

10k+ parts

-

66

$1.635

-

-

-

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.044

10k+ parts

$0.042

3,000

-

$0.065

$0.044

$0.042

Argo Parts USA

USA . 1,111 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,111

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,000

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Overview

Enhance your electronic designs with the ADTC114YUAQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated is known for delivering top-quality components that exceed expectations. This small signal Bipolar Junction Transistor (BJT) offers a wide range of applications, from amplifiers to switching circuits. With its NPN polarity and single configuration with built-in resistor, this transistor provides reliable performance in a compact package. Experience the value and benefits of the ADTC114YUAQ-7, including a high DC current gain, low collector-emitter voltage, and excellent transition frequency. Upgrade your projects with this high-performing component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body ensures durability and protection of the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with existing circuit designs, providing compatibility and flexibility in usage.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces component count, making the product more convenient to use and saving space on the PCB.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Maximum Collector-Emitter Voltage: 50 V

The high maximum voltage rating of 50V provides a wide range of voltage applications, making the transistor suitable for various voltage levels in circuits.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for handling moderate current loads, making the transistor versatile for a range of current requirements in circuits.

Nominal Transition Frequency (fT): 250 MHz

The high fT value of 250 MHz indicates fast switching speeds and high-frequency performance, making it ideal for applications requiring rapid signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTC114YUAQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTC114YUAQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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