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ADTC114EUAQ-13

Diodes Incorporated

ADTC114EUAQ-13 by Diodes Incorporated

Diodes Inc.'s ADTC114EUAQ-13 is a NPN BJT with hFE of 30, VCE of 50V, and fT of 250MHz. It's used in automotive applications meeting AEC-Q101 standard, featuring single configuration with built-in resistor for surface mount designs.

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,829 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.049

10k+ parts

$0.033

2,829

$0.200

$0.076

$0.049

$0.033

Verical

USA . 3,480,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.020

3,480,000

-

-

-

$0.020

Master Electronics

USA . 17,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.054

17,499

-

-

-

$0.054

Chip1Stop

Japan . 17,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

17,499

-

-

-

$0.062

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.030

20,000

-

-

-

$0.030

Rapid Electronics

USA . 17,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

17,499

-

-

-

$0.062

IBS Electronics

USA . 17,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.048

17,499

-

-

-

$0.048

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 674 parts In-Stock

1+ parts

$0.173

100+ parts

$0.058

1k+ parts

$0.029

10k+ parts

-

674

$0.173

$0.058

$0.029

-

Component Stockers USA

USA . 57,578 parts In-Stock

1+ parts

$0.200

100+ parts

$0.060

1k+ parts

$0.040

10k+ parts

$0.020

57,578

$0.200

$0.060

$0.040

$0.020

Native Components

USA . 362 parts In-Stock

1+ parts

$23.153

100+ parts

-

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362

$23.153

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Northwest PG Solutions

USA . 682 parts In-Stock

1+ parts

$25.469

100+ parts

$22.922

1k+ parts

-

10k+ parts

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682

$25.469

$22.922

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-

Eastek

USA . 30,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.027

30,000

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$0.027

Perfect Parts

USA . 22,400 parts In-Stock

1+ parts

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100+ parts

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22,400

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Overview

Enhance your electronic designs with the ADTC114EUAQ-13 by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for a wide range of applications. With its NPN polarity, built-in resistor, and high reliability, this transistor offers unmatched performance and durability. Experience seamless integration with its surface-mount capability and compact packaging, making it ideal for space-constrained projects. Trust in Diodes Incorporated's reputation for excellence and innovation, and unlock the potential of your next project with the ADTC114EUAQ-13.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to external elements, ensuring the longevity of the transistor.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into various circuit designs, making it versatile for different applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies the circuit design and saves space on the PCB, making it convenient for compact electronic devices.

Surface Mount: YES

Surface mount capability enables easy and efficient assembly onto circuit boards, reducing manufacturing time and costs.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and place on the PCB, facilitating the assembly process.

Terminal Form: GULL WING

Gull wing terminals provide secure solder joints and reliable electrical connections during assembly, ensuring stable performance.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor offers consistent and reliable amplification capabilities in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating of 50V allows for the transistor to handle higher voltages, increasing its versatility in different applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor, making it a durable and long-lasting component for electronic devices.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads, suitable for low-power applications.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connection options, making it easier to integrate into different circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand the soldering process without compromising its performance.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable solder joints and proper bonding during the assembly process, maintaining the overall quality of the transistor.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and performance under harsh environmental conditions, making it suitable for automotive applications.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency of 250 MHz indicates fast switching speeds and high-frequency performance, making it ideal for applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTC114EUAQ-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTC114EUAQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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