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ADTC114ECAQ-13

Diodes Incorporated

ADTC114ECAQ-13 by Diodes Incorporated

Diodes Inc.'s ADTC114ECAQ-13 is a NPN BJT with built-in resistor, hFE of 30, VCE of 50V. Ideal for small outline applications in automotive electronics due to AEC-Q101 compliance and fT of 250MHz.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 40,000 parts In-Stock

1+ parts

$0.164

100+ parts

$0.041

1k+ parts

$0.034

10k+ parts

$0.024

40,000

$0.164

$0.041

$0.034

$0.024

Verical

USA . 390,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

390,000

-

-

-

$0.028

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 720,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.048

720,000

-

-

-

$0.048

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 412 parts In-Stock

1+ parts

$0.436

100+ parts

-

1k+ parts

-

10k+ parts

$0.419

412

$0.436

-

-

$0.419

Northwest PG Solutions

USA . 2,282 parts In-Stock

1+ parts

$0.480

100+ parts

-

1k+ parts

-

10k+ parts

$0.423

2,282

$0.480

-

-

$0.423

Glotronic Ltd.

UK . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,000

-

-

-

-

iodParts Technologies Inc.

India . 370 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

370

-

-

-

-

Overview

Experience superior performance and reliability with the ADTC114ECAQ-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated offers high-quality Small Signal Bipolar Junction Transistors (BJTs) that are perfect for a wide range of applications. With its NPN polarity, built-in resistor, and sleek rectangular package design, this transistor provides unmatched value and benefits to customers. Whether you're looking for efficiency, durability, or versatility, the ADTC114ECAQ-13 delivers it all. Upgrade your projects today with this top-of-the-line transistor from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits, making it versatile for various electronic applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor, making it easier to integrate into circuits.

Surface Mount: YES

Easily mountable on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Efficient use of space on the circuit board, optimizing components placement and layout.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, offering a wide range of potential uses.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current loads, suitable for many common electronic circuits.

Nominal Transition Frequency (fT): 250 MHz

Provides high-frequency performance, making this transistor ideal for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADTC114ECAQ-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADTC114ECAQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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