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2DC4672-13

Diodes Incorporated

2DC4672-13 by Diodes Incorporated

Diodes Inc. 2DC4672-13 is a NPN BJT transistor with max. power dissipation of 2W, hFE of 45, and max. collector current of 3A. Ideal for switching applications in small outline packages, operating up to 150°C with a max. VCE of 50V.

Median Price

$0.167

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,740 parts In-Stock

1+ parts

$0.610

100+ parts

$0.240

1k+ parts

$0.161

10k+ parts

$0.141

6,740

$0.610

$0.240

$0.161

$0.141

DigiKey

USA . 3,052 parts In-Stock

1+ parts

$0.640

100+ parts

$0.254

1k+ parts

$0.172

10k+ parts

$0.130

3,052

$0.640

$0.254

$0.172

$0.130

Verical

USA . 1,182,500 parts In-Stock

1+ parts

-

100+ parts

-

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$0.100

1,182,500

-

-

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$0.100

Future Electronics

Canada . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.082

7,500

-

-

-

$0.082

RS (Exports)

UK . 2,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.167

10k+ parts

$0.158

2,720

-

-

$0.167

$0.158

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rutronik

Germany . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

10,000

-

-

-

$0.078

Diverse Electronics

Canada . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8,000

-

-

-

-

NAC Semi

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

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7,500

-

-

-

-

IBS Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.107

7,500

-

-

-

$0.107

Cyclops Electronics Ltd

UK . 1,551 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,551

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 777,427 parts In-Stock

1+ parts

$0.450

100+ parts

$0.190

1k+ parts

$0.130

10k+ parts

$0.100

777,427

$0.450

$0.190

$0.130

$0.100

Northwest PG Solutions

USA . 1,894 parts In-Stock

1+ parts

$3.372

100+ parts

-

1k+ parts

-

10k+ parts

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1,894

$3.372

-

-

-

Andel Nordic

Denmark . 662 parts In-Stock

1+ parts

$5.928

100+ parts

-

1k+ parts

$5.691

10k+ parts

$5.691

662

$5.928

-

$5.691

$5.691

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

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100+ parts

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306,000

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Perfect Parts

USA . 97,905 parts In-Stock

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97,905

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 19,310 parts In-Stock

1+ parts

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19,310

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GreenTree Electronics

Israel . 7,500 parts In-Stock

1+ parts

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7,500

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Lixinc

USA . 6,280 parts In-Stock

1+ parts

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6,280

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-

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Kepictronics

USA . 5,180 parts In-Stock

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5,180

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iodParts Technologies Inc.

India . 2,840 parts In-Stock

1+ parts

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2,840

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Eastek

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Futuretech Components

Singapore . 797 parts In-Stock

1+ parts

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797

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Native Components

USA . 117 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$2.973

10k+ parts

-

117

-

-

$2.973

-

Overview

Unlock the power of high-quality electronics with the 2DC4672-13 by Diodes Incorporated. Designed for small signal bipolar junction transistor applications, this NPN transistor offers seamless switching capabilities in a compact and durable package. With a maximum power dissipation of 2W and a collector current of 3A, this transistor is perfect for a wide range of electronic devices. Trust Diodes Incorporated for reliable and efficient components that deliver exceptional performance every time. Upgrade your electronics with the 2DC4672-13 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient switching characteristics.

Surface Mount: YES

Surface mount technology allows for easy and convenient integration onto circuit boards, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation capability, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 45

A high DC current gain ensures reliable and consistent performance in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable operation in varied environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

A high collector-emitter voltage rating ensures durability and protection against voltage spikes in the circuit.

Maximum Collector Current (IC): 3 A

With a high collector current rating, this transistor can handle higher currents, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 180 MHz

The high transition frequency allows for high-speed switching and amplification, ideal for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DC4672-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

45

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DC4672-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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