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2DC4617S-7-F

Diodes Incorporated

2DC4617S-7-F by Diodes Incorporated

Diodes Inc. 2DC4617S-7-F is a NPN BJT with max. power dissipation of 0.15W, hFE of 270, and fT of 180MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low collector-emitter voltage.

Median Price

$0.222

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 11,150 parts In-Stock

1+ parts

$0.340

100+ parts

$0.132

1k+ parts

$0.087

10k+ parts

$0.062

11,150

$0.340

$0.132

$0.087

$0.062

Newark

USA . 2,990 parts In-Stock

1+ parts

$0.350

100+ parts

$0.136

1k+ parts

$0.089

10k+ parts

-

2,990

$0.350

$0.136

$0.089

-

Mouser Electronics

USA . 3,211 parts In-Stock

1+ parts

$0.370

100+ parts

$0.141

1k+ parts

$0.093

10k+ parts

$0.058

3,211

$0.370

$0.141

$0.093

$0.058

Verical

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

96,000

-

-

-

$0.050

Farnell

UK . 2,990 parts In-Stock

1+ parts

-

100+ parts

$0.087

1k+ parts

$0.055

10k+ parts

-

2,990

-

$0.087

$0.055

-

Element14

Singapore . 2,990 parts In-Stock

1+ parts

-

100+ parts

$0.104

1k+ parts

$0.086

10k+ parts

-

2,990

-

$0.104

$0.086

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 11,240 parts In-Stock

1+ parts

-

100+ parts

-

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11,240

-

-

-

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ACDS - Activité Composants Distribution Service

France . 2,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,651

-

-

-

-

Bristol Electronics

USA . 2,651 parts In-Stock

1+ parts

-

100+ parts

$0.135

1k+ parts

$0.081

10k+ parts

$0.054

2,651

-

$0.135

$0.081

$0.054

Dan-Mar Components

USA . 2,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,651

-

-

-

-

VNN

France . 2,048 parts In-Stock

1+ parts

-

100+ parts

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2,048

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

-

100+ parts

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550

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 25,049 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

25,049

$0.038

-

-

-

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.408

100+ parts

$0.151

1k+ parts

$0.077

10k+ parts

$0.072

3,000

$0.408

$0.151

$0.077

$0.072

Modulus Dynamics

Lithuania . 2,023 parts In-Stock

1+ parts

$0.515

100+ parts

$0.515

1k+ parts

$0.515

10k+ parts

-

2,023

$0.515

$0.515

$0.515

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Corohmni

South Africa . 221 parts In-Stock

1+ parts

$1.413

100+ parts

-

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221

$1.413

-

-

-

Perfect Parts

USA . 44,275 parts In-Stock

1+ parts

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44,275

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Kepictronics

USA . 21,788 parts In-Stock

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21,788

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-

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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15,000

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QUARKTWIN TECHNOLOGY LTD

USA . 9,453 parts In-Stock

1+ parts

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9,453

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-

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Argo Parts USA

USA . 3,069 parts In-Stock

1+ parts

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3,069

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

-

-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Overview

Enhance your electronic designs with the 2DC4617S-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated offers top-quality Small Signal Bipolar Junction Transistors (BJTs) that are perfect for a wide range of applications. With its NPN polarity, single configuration, and high DC current gain of 270, this transistor provides exceptional performance and reliability. Whether you're working on audio amplification, signal processing, or sensor circuits, the 2DC4617S-7-F is sure to deliver superior results. Trust Diodes Incorporated for cutting-edge technology and unmatched value in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into various circuit designs, offering versatility and compatibility with many electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape enables efficient placement and soldering on circuit boards, saving space and facilitating assembly.

Maximum Power Dissipation: 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels effectively without overheating.

Minimum DC Current Gain (hFE): 270

High minimum DC current gain ensures stable and consistent performance in amplification circuits, making it reliable for signal processing applications.

Maximum Collector-Emitter Voltage: 50 V

The 50 V maximum collector-emitter voltage rating allows for safe and reliable operation within a wide voltage range, increasing the transistor's versatility.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency of 180 MHz indicates excellent high-frequency performance, ideal for applications requiring fast signal processing and switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DC4617S-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DC4617S-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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