Loading...

2DC4617QLP-7

Diodes Incorporated

2DC4617QLP-7 by Diodes Incorporated

Diodes Incorporated 2DC4617QLP-7 is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 120, and max. collector-emitter voltage of 50V. It's used in applications requiring small signal amplification like audio amplifiers and signal processing circuits due to its high transition frequency of 100MHz.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,394 parts In-Stock

1+ parts

$0.180

100+ parts

$0.068

1k+ parts

$0.043

10k+ parts

$0.030

1,394

$0.180

$0.068

$0.043

$0.030

Newark

USA . 870 parts In-Stock

1+ parts

$0.185

100+ parts

$0.070

1k+ parts

$0.044

10k+ parts

-

870

$0.185

$0.070

$0.044

-

Mouser Electronics

USA . 20 parts In-Stock

1+ parts

$0.210

100+ parts

$0.073

1k+ parts

$0.053

10k+ parts

$0.036

20

$0.210

$0.073

$0.053

$0.036

Verical

USA . 1,626,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.018

1,626,000

-

-

-

$0.018

Farnell

UK . 4,890 parts In-Stock

1+ parts

-

100+ parts

$0.056

1k+ parts

$0.031

10k+ parts

$0.031

4,890

-

$0.056

$0.031

$0.031

Element14

Singapore . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.035

10k+ parts

$0.027

4,000

-

$0.071

$0.035

$0.027

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.027

3,000

-

-

-

$0.027

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

-

200

$0.046

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,900 parts In-Stock

1+ parts

$0.209

100+ parts

$0.101

1k+ parts

$0.041

10k+ parts

$0.038

2,900

$0.209

$0.101

$0.041

$0.038

Component Stockers USA

USA . 326,777 parts In-Stock

1+ parts

$0.300

100+ parts

$0.110

1k+ parts

$0.060

10k+ parts

$0.020

326,777

$0.300

$0.110

$0.060

$0.020

Andel Nordic

Denmark . 442 parts In-Stock

1+ parts

$0.880

100+ parts

-

1k+ parts

$0.613

10k+ parts

$0.613

442

$0.880

-

$0.613

$0.613

Perfect Parts

USA . 12,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,638

-

-

-

-

Lixinc

USA . 3,478 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,478

-

-

-

-

Northwest PG Solutions

USA . 966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

966

-

-

-

-

Native Components

USA . 639 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

639

-

-

-

-

Overview

Enhance your electronic projects with the 2DC4617QLP-7 from Diodes Incorporated, a top-tier manufacturer known for quality and reliability. This NPN small signal BJT boasts a high DC current gain of 120 and a maximum collector-emitter voltage of 50V, making it ideal for a wide range of applications. With a maximum power dissipation of 0.25W and a peak reflow temperature of 260°C, this chip carrier transistor offers exceptional performance and durability. Upgrade your designs with the 2DC4617QLP-7 and experience the value and benefits that only Diodes Incorporated can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor, making it versatile and easy to integrate into circuits.

Configuration: SINGLE

Simplified design for straightforward usage in circuits.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.25 W

Can handle moderate power levels, suitable for low to medium power applications.

Package Style (Meter): CHIP CARRIER

Compact package style suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 120

Good amplification capability with a high minimum current gain.

Maximum Operating Temperature: 150 °C

Can withstand higher temperatures, offering reliability in harsh environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low-voltage applications, offering protection against excess voltage.

Transistor Element Material: SILICON

Silicon-based material provides stable and consistent performance.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current capacity for many small signal applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Corrosion-resistant finish for long-term reliability.

Nominal Transition Frequency (fT): 100 MHz

High frequency capability for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DC4617QLP-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DC4617QLP-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13