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2DB1188R-13

Diodes Incorporated

2DB1188R-13 by Diodes Incorporated

2DB1188R-13 by Diodes Inc. is a PNP BJT transistor with 1W power dissipation, hFE of 180, and max operating temp of 150°C. Ideal for switching applications in surface mount designs due to its 32V collector-emitter voltage and compact small outline package style.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 724 parts In-Stock

1+ parts

$0.700

100+ parts

$0.278

1k+ parts

$0.189

10k+ parts

$0.144

724

$0.700

$0.278

$0.189

$0.144

Newark

USA . 2,490 parts In-Stock

1+ parts

$0.705

100+ parts

$0.306

1k+ parts

$0.223

10k+ parts

-

2,490

$0.705

$0.306

$0.223

-

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$0.950

100+ parts

$0.398

1k+ parts

$0.216

10k+ parts

$0.166

7

$0.950

$0.398

$0.216

$0.166

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

30,000

-

-

-

$0.113

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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2,500

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-

-

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Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

2,500

-

-

-

$0.113

Farnell

UK . 1,470 parts In-Stock

1+ parts

-

100+ parts

$0.179

1k+ parts

$0.116

10k+ parts

-

1,470

-

$0.179

$0.116

-

Element14

Singapore . 1,470 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.174

10k+ parts

-

1,470

-

$0.290

$0.174

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 87,600 parts In-Stock

1+ parts

-

100+ parts

-

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87,600

-

-

-

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NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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2,500

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Rebound Electronics

UK . 350 parts In-Stock

1+ parts

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350

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 338 parts In-Stock

1+ parts

$0.226

100+ parts

-

1k+ parts

-

10k+ parts

$0.217

338

$0.226

-

-

$0.217

Northwest PG Solutions

USA . 1,682 parts In-Stock

1+ parts

$0.249

100+ parts

-

1k+ parts

-

10k+ parts

$0.219

1,682

$0.249

-

-

$0.219

Component Stockers USA

USA . 223,157 parts In-Stock

1+ parts

$0.390

100+ parts

$0.080

1k+ parts

$0.080

10k+ parts

$0.110

223,157

$0.390

$0.080

$0.080

$0.110

Perfect Parts

USA . 25,415 parts In-Stock

1+ parts

-

100+ parts

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25,415

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Kepictronics

USA . 2,650 parts In-Stock

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2,650

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Eastek

USA . 2,500 parts In-Stock

1+ parts

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2,500

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GreenTree Electronics

Israel . 1,667 parts In-Stock

1+ parts

-

100+ parts

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1,667

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-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,000

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Overview

Unlock the potential of your electronic projects with the 2DB1188R-13 by Diodes Incorporated. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unmatched quality and reliability. Perfect for switching applications, this PNP transistor provides seamless performance in a compact package. With a maximum power dissipation of 1 W and a maximum collector-emitter voltage of 32 V, this transistor delivers exceptional value and efficiency. Trust Diodes Incorporated to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this transistor suitable for various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching purposes, ensuring efficient performance in switching operations.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and space-saving design.

Maximum Collector-Emitter Voltage: 32 V

With a high maximum voltage rating, this transistor can handle higher voltage applications with ease.

Maximum Collector Current (IC): 2 A

Capable of handling a high collector current, making it suitable for applications requiring higher power outputs.

Nominal Transition Frequency (fT): 120 MHz

High transition frequency allows for faster switching speeds and better high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DB1188R-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DB1188R-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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