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BCP56-16-AQ

Continental Device India

BCP56-16-AQ by Continental Device India

BCP56-16-AQ by Continental Device India is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. It's used in automotive applications due to AEC-Q101 and IATF 16949 standards compliance for high reliability.

Median Price

$0.520

Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,481 parts In-Stock

1+ parts

$0.520

100+ parts

$0.202

1k+ parts

$0.135

10k+ parts

$0.121

1,481

$0.520

$0.202

$0.135

$0.121

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$0.286

100+ parts

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58

$0.286

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Vyrian

USA . 3,854 parts In-Stock

1+ parts

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3,854

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Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

$0.286

100+ parts

$0.272

1k+ parts

$0.258

10k+ parts

$0.255

120

$0.286

$0.272

$0.258

$0.255

QUARKTWIN TECHNOLOGY LTD

USA . 25,415 parts In-Stock

1+ parts

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100+ parts

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25,415

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Overview

Enhance your electronics projects with the BCP56-16-AQ Power Bipolar Junction Transistor by Continental Device India. This NPN transistor offers high-quality performance in a small outline package, making it ideal for a wide range of applications. With a low VCEsat of 0.5V and a maximum operating temperature of 150°C, this transistor provides reliable power dissipation up to 1.33W. Trust in Continental Device India's reputation for excellence in manufacturing to deliver a product that meets AEC-Q101 and IATF 16949 standards. Upgrade your designs with the superior value and benefits of the BCP56-16-AQ today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

Compatible with a wide range of circuits and offers flexibility in design and implementation.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration, reducing complexity and improving reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during manufacturing.

Maximum VCEsat: 0.5 V

Low saturation voltage ensures efficient operation and minimizes power loss in the circuit.

Package Shape: RECTANGULAR

Compact and space-saving design that is suitable for densely packed electronic devices.

No. of Terminals: 4

Provides multiple connection points for versatile circuit integration and connectivity options.

Maximum Power Dissipation (Abs): 1.33 W

Capable of handling high power levels without thermal overload, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact form factor for easy integration into various electronic designs where space is limited.

Minimum DC Current Gain (hFE): 100

High current gain allows for amplification of weak signals with minimal distortion, improving signal quality.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in different environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

High breakdown voltage for handling large voltage differences in the circuit, ensuring device protection and longevity.

Transistor Element Material: SILICON

Silicon-based construction offers high performance, reliability, and efficiency in various electronic applications.

Minimum Operating Temperature: -65 °C

Suitable for use in extreme low-temperature environments without compromising performance.

Maximum Collector Current (IC): 1 A

Capable of carrying high current levels, making it suitable for power applications and high-current circuits.

Terminal Position: DUAL

Dual terminal configuration for easy and secure connections, enhancing overall reliability in the circuit.

Reference Standard: AEC-Q101; IATF 16949

Compliance with industry standards ensures quality, reliability, and compatibility with automotive and other electronic applications.

Nominal Transition Frequency (fT): 130 MHz

High-frequency capability for fast switching speeds, making it suitable for applications requiring high-speed performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP56-16-AQ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP56-16-AQ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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