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2N4428

Asi Semiconductor

2N4428 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): .425 A;

Median Price

$77.220

Lifecycle Status

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Master Electronics

USA . 13 parts In-Stock

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Freelance Electronics

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Bristol Electronics

USA . 60 parts In-Stock

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American Microsemiconductor Inc.

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Digiode

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MKK Technologies

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DigiPath Technology Company

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Native Components

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Corphita

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Northwest PG Solutions

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4428 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4428 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-252-1329, 5961002521329, 5961-00-195-1013, 5961001951013, 5961-01-006-7996, 5961010067996, 5961-99-118-8420, 5961991188420

NIIN

002521329, 001951013, 010067996, 991188420

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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