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BLP15H9S10GZ

Ampleon Netherlands B V

BLP15H9S10GZ by Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Style (Meter): SMALL OUTLINE; Minimum Power Gain (Gp): 19 dB;

Median Price

$22.550

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,532 parts In-Stock

1+ parts

$22.550

100+ parts

$16.111

1k+ parts

$14.751

10k+ parts

-

1,532

$22.550

$16.111

$14.751

-

Mouser Electronics

USA . 827 parts In-Stock

1+ parts

$22.550

100+ parts

$16.120

1k+ parts

$15.050

10k+ parts

-

827

$22.550

$16.120

$15.050

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,131 parts In-Stock

1+ parts

$42.210

100+ parts

-

1k+ parts

-

10k+ parts

-

3,131

$42.210

-

-

-

Technical Specifications

RF Power Field Effect Transistors (FET) BLP15H9S10GZ attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

106 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.1 pF

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

19 dB

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLP15H9S10GZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ampleon Netherlands B V

The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.

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