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Zetex Plc Small Signal Field Effect Transistors (FET) 17

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BS107PSTOA by Zetex Plc

BS107PSTOA

Zetex Plc

BS107PSTOA by Zetex Plc is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 0.12A and 23 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. The transistor's PLASTIC/EPOXY body, RECTANGULAR shape, and WIRE terminals make it suitable for various electronic designs.

SINGLE

200 V

.12 A

23 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

BS107PSTOB by Zetex Plc

BS107PSTOB

Zetex Plc

BS107PSTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. With 200V DS Breakdown Voltage, it has 23 ohm Drain-Source On Resistance and 0.12A Drain Current. Its PLASTIC/EPOXY body, ENHANCEMENT MODE operation, and SILICON material make it ideal for various electronic circuits.

SINGLE

200 V

.12 A

23 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

ZVNL120ASTOB by Zetex Plc

ZVNL120ASTOB

Zetex Plc

ZVNL120ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 200V DS Breakdown Voltage, 0.18A ID, and 10Ω RDS(on). With SILICON element material and ENHANCEMENT MODE operation, it operates up to 200°C making it suitable for various electronic circuits.

SINGLE

200 V

.18 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVN4424ASTOA by Zetex Plc

ZVN4424ASTOA

Zetex Plc

ZVN4424ASTOA by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A Drain Current, and 6ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR tech.

SINGLE

240 V

.26 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVN4424ASTOB by Zetex Plc

ZVN4424ASTOB

Zetex Plc

ZVN4424ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A ID, and 6Ω Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR technology.

SINGLE

240 V

.26 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVN0545ASTOB by Zetex Plc

ZVN0545ASTOB

Zetex Plc

ZVN0545ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 450V DS Breakdown Voltage, 50Ω Drain-Source On Resistance, and 0.09A Max Drain Current. Ideal for high voltage switching circuits due to its ENHANCEMENT MODE operation and SILICON material.

SINGLE

450 V

.09 A

50 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVN4206ASTOA by Zetex Plc

ZVN4206ASTOA

Zetex Plc

Zetex Plc's ZVN4206ASTOA is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring SINGLE configuration, it has 0.6A ID and 1.5 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. Package style: IN-LINE, terminal finish: MATTE TIN, making it suitable for various electronic designs.

SINGLE

60 V

.6 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

ZVN4206ASTOB by Zetex Plc

ZVN4206ASTOB

Zetex Plc

Zetex Plc's ZVN4206ASTOB is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Featuring single configuration, 0.6A ID, and 1.5Ω RDS(on), it operates in enhancement mode up to 200°C. Its rectangular package with wire terminals makes it suitable for various electronic devices.

SINGLE

60 V

.6 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

ZVP2110ASTOA by Zetex Plc

ZVP2110ASTOA

Zetex Plc

ZVP2110ASTOA by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). With ENHANCEMENT MODE operation and SILICON material, it operates up to 200°C making it ideal for various electronic circuits.

SINGLE

100 V

.23 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

P-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

ZVP2110ASTOB by Zetex Plc

ZVP2110ASTOB

Zetex Plc

ZVP2110ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 8Ω Drain-Source Resistance, and 0.23A Drain Current. With SILICON element material and ENHANCEMENT MODE operation, it's ideal for various electronic circuits.

SINGLE

100 V

.23 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

P-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVP4424ASTOB by Zetex Plc

ZVP4424ASTOB

Zetex Plc

ZVP4424ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 15 ohm Drain-Source Resistance, and 0.2A Drain Current. With ENHANCEMENT MODE operation and SILICON material, it operates at up to 200°C.

SINGLE

240 V

.2 A

15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

P-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVP3306ASTOB by Zetex Plc

ZVP3306ASTOB

Zetex Plc

ZVP3306ASTOB by Zetex Plc is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 14 ohm Drain-Source On Resistance, 0.16A Drain Current, and operates at up to 200°C. The transistor has a RECTANGULAR shape, WIRE terminals, and uses METAL-OXIDE SEMICONDUCTOR technology.

SINGLE

60 V

.16 A

14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

P-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

ZVP3306ASTZ by Zetex Plc

ZVP3306ASTZ

Zetex Plc

ZVP3306ASTZ by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 14 ohm Drain-Source On Resistance, and 0.16A Drain Current. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it's ideal for various electronic circuits requiring efficient switching capabilities.

SINGLE

60 V

.16 A

14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

P-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

ZVP2106ASTOB by Zetex Plc

ZVP2106ASTOB

Zetex Plc

ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.

SINGLE

60 V

.28 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-W3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

P-CHANNEL

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

ZVN3320FTC by Zetex Plc

ZVN3320FTC

Zetex Plc

Zetex Plc's ZVN3320FTC is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.06A ID, and 25 ohm RDS(on). Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for enhancing circuit performance in various electronic devices.

SINGLE

200 V

.06 A

25 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SILICON

ZVP3310FTC by Zetex Plc

ZVP3310FTC

Zetex Plc

ZVP3310FTC by Zetex Plc is a P-CHANNEL FET with 100V DS Breakdown Voltage, 20 ohm Drain-Source Resistance, and 150°C Operating Temp. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation and compact SMALL OUTLINE package style.

SINGLE

100 V

.075 A

20 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SILICON

BSS123TC by Zetex Plc

BSS123TC

Zetex Plc

BSS123TC by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS(ON). With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for small outline surface mount designs.

SINGLE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON